Abstract: A polysilicon thin film transistor (poly-Si TFT) with a self-aligned lightly doped drain (LDD) structure has a transparent insulating substrate; a buffering layer formed on the transparent insulating substrate; a polysilicon layer formed on the buffering layer and having a channel region, an LDD structure surrounding the channel region, and a source/drain region surrounding the LDD structure; a gate insulating layer formed on the polysilicon layer; a gate layer formed on the gate insulating layer and positioned over the channel region; an insulating spacer formed on the sidewall of the gate layer and positioned over the LDD structure; and a subgate gate layer formed on the insulating spacer.

Abstract: A telecommunication base unit and a mobile information unit combination is disclosed. The base unit includes circuitry for receiving an incoming telephone call, a caller identification circuit, an on-line/off-line control circuit, a dial circuit, an optional LCD display, and an optional keypad on the base unit. It further includes storage area for storing a copy of the information in the mobile information unit and for logging caller identification information and messages. The base unit provides a connector cradle designed to receive and communicate with the mobile information unit. Additionally, the base unit can be connected to a keyboard for carrying out entering and editing functions. Other external connectors are provided for optionally connecting to other devices, including a personal computer and printer. The mobile information unit stores a variety of information and it has the ability to upload information and/or synchronize information with the base unit.