Abstract: Chalcopyrite semiconductors, such as thin films of copper-indium-diselenide (CuInSe2), copper-gallium-diselenide (CuGaSe2), and Cu(Inx,Ga1-x)Se2, all of which are sometimes generically referred to as CIGS, have become the subject of considerable interest and study for semiconductor devices in recent years. They are of particular interest for photovoltaic device or solar cell absorber applications. The quality of Cu(In,Ga)Se2 thin films, as an example of chalcopyrite films, is controlled by making spectrophotometric measurements of light reflected from the film surface. This permits the result of non-contacting measurements of films in a continuous production environment to be fed back to adjust the production conditions in order to improve or maintain the quality of subsequently produced film.

Abstract: Glitter is applied to cylindrical articles by forcing them through a pot of clear lacquer, squeegeeing the coating to a desired thickness by means of an elastic elastomeric grommet, and then immediately passing the articles through a pot of glitter. The articles then pass through a vacuum tube, which removes the excess glitter for reuse.

Abstract: The disclosed educational snap-together toy vehicle system is exemplified in this application as a set of cars and trucks. The vehicles are broken down into four primary components: a main body, front clip, rear clip, and roof. The body parts are snapped together by a contrasting color, plastic three-element connector system consisting of: a fixed universal socket; an intermediate shaped-socket coupler; and a fixed shaped socket.

Abstract: An auction service is provided that stimulates competition between energy suppliers (i.e., electric power or natural gas). A bidding moderator (Moderator) receives bids from the competing suppliers of the rate each is willing to charge to particular end users for estimated quantities of electric power or gas supply (separate auctions). Each supplier receives competing bids from the Moderator and has the opportunity to adjust its own bids down or up, depending on whether it wants to encourage or discourage additional energy delivery commitments in a particular geographic area or to a particular customer group. Each supplier's bids can also be changed to reflect each supplier's capacity utilization. Appropriate billing arrangements are also disclosed. The technology required to facilitate forward delivery transactions, in which a buyer and seller agree to the terms of a transaction today but schedule the delivery for a future time, would be helpful to end users, resellers and suppliers.

Abstract: A planar optic sensor for measuring the optical absorbance spectrum of a side variety of substances in situ comprises a planar waveguide Mach-Zehnder interferometer having a reference path and a sensing path. The sensing path of the waveguide is exposed to the sample under test, the sample interacting with the guided light via emanations from the light as it propagates through the sensing path. The reference path of the waveguide is provided with a heater that linearly varies over time the refractive index of the reference path material, in this manner varying the optical path length of the reference path. Fourier spectroscopic techniques are applied to compare the spectrum of a white light source without a sample present in the sensing path to the spectrum of the white light source in the presence of a sample in the sensing path, as the optical path length of the reference path is swept over time. From these data the absorption spectrum of the sample is determined.

Abstract: In a first embodiment of the invention a layer of ruthenium oxide is reactively deposited onto a substrate, then annealed for TCR adjustment and for stabilization. In a second, bi-layer embodiment of the invention, a layer of tantalum nitride is first reactively deposited onto a substrate, then annealed for stabilization. After a ruthenium oxide layer is reactively deposited onto the annealed tantalum nitride layer, the structure is annealed until a near-zero effective TCR for the bi-layer resistor is achieved. The ruthenium oxide capping layer serves as a barrier against chemical attack.