Patents Represented by Attorney, Agent or Law Firm Christopher Novak
  • Method for manufacturing semiconductor device containing a silicon-rich layer
    Patent number: 6489213
    Abstract: A semiconductor device having a controlled resistance value within a predetermined range. The semiconductor device includes a substrate and an oxide layer provided above the substrate. There is also included a first dielectric layer that is silicon-rich above the oxide layer. There is further included a second dielectric layer above the silicon-rich layer.
    Type: Grant
    Filed: January 5, 1996
    Date of Patent: December 3, 2002
    Assignee: Integrated Device Technology, Inc.
    Inventors: Cheng-Chen Calvin Hsueh, Shih-Ked Lee