Patents Represented by Attorney Chuck Guenzer

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  • Self aligned contact etch using difluoromethane and trifluoromethane
    Patent number: 5965035
    Abstract: An oxide etch process that is highly selective to nitride, thereby being beneficial for a self-aligned contact etch of silicon dioxide to an underlying thin layer of silicon nitride. The process uses difluoromethane (CH.sub.2 F.sub.2) for its strong polymer forming and a greater amount of trifluoromethane (CHF.sub.3) for its strong etching, and with a high diluent fraction of argon (Ar). The etch process is performed at a low pressure of about 20 milliTorr in a high-density plasma etching chamber.
    Type: Grant
    Filed: October 23, 1997
    Date of Patent: October 12, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Raymond Hung, Jian Ding, Joseph P. Caulfield, Gerald Z. Yin