Abstract: Disclosed is an optical disc drive sharing switching device, method and associated application system. The optical disc drive sharing switching device integrates a personal computer and an optical disc player together inside an information-processing appliance. The personal computer and the optical disc player share the use of an optical disc drive. The user is free to switch connections between the personal computer and the optical disc player with the optical disc drive. The device uses a simple switching program and the computer functions normally even if the optical disc drive is not under its control.

Abstract: A method for growing stoichiometric lithium niobate and lithium tantalate single crystals is provided. A crystal growing apparatus that includes a long crucible with a separation member therein is used. A solid feed material is quenched from a molten state, solidified in batches or sintered before charged in the long crucible to obtain substantially stoichiometric solids. The separation member divides the long crucible into a melting zone and a feeding zone located under the melting zone, and it could effectively prevent bubble formation in the growing crystal. The stoichiometry of the axial and radial composition can be well controlled, and the control of the diameter of the crystal body is easily achieved as well.

Abstract: A method for forming a PN junction is described. A stacked structure consisting of an N-doped (or P-doped) layer, a dielectric layer and a nucleation layer is formed, and then an insulating layer is formed having an opening therein. A P-doped (or N-doped) polysilicon or amorphous silicon layer is filled into the opening, and then annealed to convert into a single-crystal silicon layer. Then, the dielectric layer is broken down to form a PN junction.

Abstract: A method for fabricating a self-aligned bipolar transistor, wherein a substrate having an epitaxial layer formed thereon as a base is provided. After this, a first dielectric layer, a second dielectric layer are sequentially formed on the epitaxial layer, followed by forming an opening in the second dielectric layer. A conductive spacer is formed on the sidewall of the opening. Using the second dielectric layer and the conductive spacer as a mask, a first dielectric layer in the opening is removed. A conductive layer is then formed in the opening as an emitter, followed by completely removing the second dielectric layer. A doping is conducted on the emitter. Using the emitter and the conductive spacer as a mask, a part of the first dielectric layer is removed. Further using the emitter and the conductive spacer as a mask, another doping is conducted to form a part of the epitaxial layer as a base contact region.