Abstract: The invention relates to the preparation of silicon tetrachloride by reacting material containing SiO.sub.2 with chlorine in the presence of carbon and metal halides and especially chlorides of the fifth main or subsidiary group of the Periodic Table at temperatures in the range of from 500.degree. to 1200.degree. C. The material containing SiO.sub.2 has a BET surface area of at least 0.1 m.sup.2 /g and the carbon has a BET surface area of at least 0.5 m.sup.2 /g.