Patents Represented by Law Firm Cushman, Darby & Cushman IP group of Pillsbury Maidson & Sutro LLP
  • Patent number: 5654211
    Abstract: A method of producing the bipolar transistor includes forming an aperture through a triple layer over an active region of an epitaxial layer, then forming a shallow polysilicon film at the bottom of the aperture. An intrinsic base region is formed by segregating a conductive impurity to the epitaxial layer by thermally oxidizing the polysilicon film. Then an extrinsic base region is formed by diffusing impurities into the epitaxial layer from a polysilicon sidewall formed on the aperture. In the transistor fabricated according to this method, an insulation layer of oxide silicon or nitrogen silicon is formed under the base polysilicon layer. Accordingly, impurities from the base polysilicon layer do not diffuse into the epitaxial layer during the diffusion process. Instead, the extrinsic base region is formed by the diffusion of impurities from the polysilicon sidewall which is connected to the base polysilicon layer. Therefore the length of the entire base region is shortened.
    Type: Grant
    Filed: June 17, 1996
    Date of Patent: August 5, 1997
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Seog Heon Ham
  • Patent number: 5615051
    Abstract: The invention provides a high-performance, bright and compact triplet that has a zoom ratio of about 1.05 with an wide field angle, said triplet comprising, in order from the object side, a first lens L1 consisting of a positive single lens of glass in a meniscus form convex on the object side, a second lens L2 located with an air separation between it and said first lens L1 and consisting of a negative single lens of glass, a third lens L3 located with an air separation between it and said second lens L2 and consisting of a positive single lens of glass in a double-convex form, and an aperture stop S located on the image side of said third lens, at least two of said first to third lenses having aspherical surfaces, and conforming to the following conditions n.sub.1 >1.6, n.sub.3 >1.6 wherein n.sub.1 and n.sub.3 are the refractive indices of said first and third lenses, respectively.
    Type: Grant
    Filed: October 7, 1994
    Date of Patent: March 25, 1997
    Assignee: Olympus Optical Co., Ltd.
    Inventor: Hideyasu Takato
  • Patent number: 5610426
    Abstract: A protective circuit that can maintain effectiveness when excess voltages of both polarities are applied is placed between the input terminal of an internal CMOS inverter and an input pad. The protective circuit includes a protective resistor, a P-channel MOSFET and an N-channel MOSFET. The N-channel MOSFET is placed between a connecting line and a ground terminal with the gate terminal of the MOSFET connected to the connecting line. The P-channel MOSFET is placed between the connecting line and the ground terminal with the gate terminal of the MOSFET connected to the connecting line. The P-channel MOSFET releases excess negative voltage from the outside using ON-state current and the N-channel MOSFET releases excess positive voltage from the outside using ON-state current.
    Type: Grant
    Filed: July 21, 1995
    Date of Patent: March 11, 1997
    Assignee: Nippondenso Co., Ltd.
    Inventors: Akiyoshi Asai, Kazuhiro Tsuruta, Takeshi Enya
  • Patent number: 5609036
    Abstract: An evaporator for cooling apparatus according to the present invention includes a cooled flow passages in a heat exchanging portion and a bypass flow passage bypassing the heat exchanging portion between a receiver for reducing the pressure (pressure P1) of liquefied refrigerant condensed by a condenser and an evaporator, which communicates in parallel with each other. A valve element is disposed in the bypass flow passage, and opens the bypass passage when the pressure P1 is equal to or less than a predetermined pressure where a refrigerant temperature within the cooled flow passage is more than a refrigerant temperature within a cooling flow passage when the refrigerant is introduced into the heat exchanging portion and where a refrigerant dryness is less than a predetermined value when the refrigerant is not introduced into the heat exchanging portion and pressure thereof is reduced directly to the refrigerant pressure within the evaporating portion.
    Type: Grant
    Filed: October 6, 1995
    Date of Patent: March 11, 1997
    Assignee: Nippondenso Co., Ltd.
    Inventors: Toshiya Nagasawa, Etuo Hasegawa, Nobuharu Kakehashi
  • Patent number: 5608902
    Abstract: In an IC card using a file management system for performing data management of a plurality of files obtained by dividing a data memory, when selection is performed to allow use of the file, discrimination ID information representing that each file is already selected is provided to each file. In accessing a file, the provided discrimination ID information is added to each access command to designate a specific access, and a file serving as an access target is recognized on the basis of the designated discrimination ID information, thereby accessing the file.
    Type: Grant
    Filed: December 9, 1994
    Date of Patent: March 4, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Yasuo Iijima