Abstract: A plasma generating system is disclosed having a source of target material droplets, e.g. tin droplets, and a laser, e.g. a pulsed CO2 laser, producing a beam irradiating the droplets at an irradiation region, the plasma producing EUV radiation. For the device, the droplet source may comprise a fluid exiting an orifice and a sub-system producing a disturbance in the fluid which generates droplets having differing initial velocities causing at least some adjacent droplet pairs to coalesce together prior to reaching the irradiation region. In one implementation, the disturbance may comprise a frequency modulated disturbance waveform and in another implementation, the disturbance may comprise an amplitude modulated disturbance waveform.

Abstract: A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps/acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps/acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.

Abstract: An EUV light source device is described herein which may comprise a laser beam travelling along a beam path, at least a portion of the beam path aligned along a linear axis; a material for interaction with the laser beam at an irradiation site to create an EUV light emitting plasma; a first reflector having a focal point, the first reflector positioned with the focal point on the linear axis, the first reflector receiving laser light along the beam path; and a second reflector receiving laser light reflected by the first reflector and directing the laser light toward the irradiation site.

Abstract: A device is disclosed herein which may comprise a chamber, a source providing a stream of target material droplets delivering target material to an irradiation region in the chamber along a path between a target material release point and the irradiation region, a gas flow in the chamber, at least a portion of the gas flowing in a direction toward the droplet stream, a system producing a laser beam irradiating droplets at the irradiation region to generate a plasma producing EUV radiation, and a shroud positioned along a portion of said stream, said shroud having a first shroud portion shielding droplets from said flow and an opposed open portion.

Abstract: As disclosed herein, a device may comprise a substrate made of a material comprising silicon, the substrate having a first side and an opposed second side; an EUV reflective multi-layer coating overlaying at least a portion of the first side; an infrared absorbing coating overlaying at least a portion of the second side; and a system generating infrared radiation to heat the absorbing coating and the substrate.

Abstract: Devices and corresponding methods of use are described herein which may comprise an enclosing structure defining a closed loop flow path and a system generating a plasma at a plasma site, e.g. laser produced plasma system, where the plasma site may be in fluid communication with the flow path. For the device, a gas may be disposed in the enclosing structure which may include an ion-stopping buffer gas and/or an etchant. A pump may be provided to force the gas through the closed loop flow path. One or more heat exchangers removing heat from gas flowing in the flow path may be provided. In some arrangements, a filter may be used to remove at least a portion of a target species from gas flowing in the flow path.

Abstract: A device is disclosed herein which may include a plasma generating system comprising a source of target material droplets and a laser producing a beam irradiating the droplets at an irradiation region, the plasma producing EUV radiation, wherein the droplet source comprises a fluid exiting an orifice and a sub-system producing a disturbance in the fluid which generates droplets having differing initial velocities causing the spacing between at least some adjacent droplets to decrease as the droplets travel to the irradiation region.

Abstract: The present invention provides a control system for a modular high repetition rate two discharge chamber ultraviolet gas discharge laser. In preferred embodiments, the laser is a production line machine with a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. Novel control features specially adapted for a two-chamber gas discharge laser system include: (1) pulse energy controls, with nanosecond timing precision (2) precision pulse to pulse wavelength controls with high speed and extreme speed wavelength tuning (3) fast response gas temperature control and (4) F2 injection controls with novel learning algorithm.

Abstract: The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source for a production line machine. The system includes an enclosed and purged beam path for delivery the laser beam to a desired location such as the entrance port of the production line machine. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems.

Abstract: A high energy, high repetition rate workpiece surface heating method and apparatus are disclosed which may cmprise a pulsed XeF laser operating at or above 4000 Hz and producing a laser output light pulse beam at a center wavelength of about 351 nm; an optical system narrowing the laser output light pulse beam to less than 20 ?m in a short axis of the laser output light pulse beam and expanding the laser output light pulse beam to form in a long axis of the beam a workpiece covering extent of teh long axis; the optical system including a field stop intermediate the laser and the workpiece; the workpiece comprising a layer to be heated; wherein the optical system focuses the laser output light pulse beam at a field stop with a magnification sufficient to maintain an intensity profile that has sufficiently steep sidewalls to allow the field stop to maintain a sufficiently steep beam profile at the workpiece without blocking the beam profile at too high an intensity level. 2.

Abstract: An apparatus and method for providing cooling to a magnetic circuit element having a magnetic core disposed around a centrally located core support member having at least one core support member wall is disclosed which may comprise a core support coolant inlet; a core support coolant outlet; a plurality of interconnected coolant flow passages contained within the core support member wall and interconnected and arranged to pass coolant from one coolant flow passage to the next within the core support member wall along a coolant flow path within at least a substantial portion of the core support member wall from the core support coolant inlet to the core support coolant outlet.

Abstract: An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses.

Abstract: An automatic F2 laser gas control, for a modular high repetition rate ultraviolet gas discharge laser. The laser gas control includes techniques, monitors, and processor for monitoring the F2 consumption rates through the operating life of the laser system. These consumption rates are used by a processor programmed with an algorithm to determine F2 injections needed to maintain laser beam quality within a delivery range. Preferred embodiments include F2 controls for a two-chamber MOPA laser system.

Abstract: A vibration control system comprising an actuator, and a sensor useful for controlling vibrations in systems for fabricating electronics equipment. The actuator may comprise one or more plates or elements of electro-active material bonded to an electroded sheet.

Abstract: A method and apparatus for measuring bandwidth of light emitted from a laser which may comprise: first and second wavelength sensitive optical bandwidth detectors providing, respectively, an output representative of a first parameter indicative of the bandwidth of the emitted light as measured respectively by the first and second bandwidth detectors, and an actual bandwidth calculation apparatus adapted to utilize these two outputs as part of a multivariable linear equation employing predetermined calibration variables specific to either the first or the second bandwidth detector, to calculate a first actual bandwidth parameter or a second actual bandwidth parameter. The first actual bandwidth parameter may be a spectrum full width at some percent of the maximum (“FWXM”), and the second actual bandwidth parameter may be a portion containing some percentage of the energy (“EX”).

Abstract: The present invention provides a gas discharge laser having at least one long-life elongated electrode for producing at least 12 billion high voltage electric discharges in a fluorine containing laser gas. In a preferred embodiment at least one of the electrodes is comprised of a first material having a relatively low anode erosion rate and a second anode material having a relatively higher anode erosion rate. The first anode material is positioned at a desired anode discharge region of the electrode. The second anode material is located adjacent to the first anode material along at least two long sides of the first material. During operation of the laser erosion occurs on both materials but the higher erosion rate of the second material assures that any tendency of the discharge to spread onto the second material will quickly erode away the second material enough to stop the spread of the discharge.

Abstract: A method and apparatus for laser light pulse stretching is disclosed which may comprise a beam splitter in the path of a laser output light pulse beam; selected to pass a first percent of the energy of a first input pulse of the laser output light pulse beam along a laser output light pulse beam output path as a first output pulse and to reflect a second percent of the energy of the laser output light pulse beam into a first delayed beam; an optical delay path receiving the first delayed beam and returning the first delayed beam to the beam splitter in an orientation such that a third percent of the first delayed beam is reflected into the output path as a second output pulse and a fourth percent is passed into the optical delay path as a second delayed beam; the optical delay path receiving the second delayed beam and returning the second delayed beam to the beam splitter in an orientation such that the third percent of the second delayed beam is reflected into the output path as a third output pulse and the

Abstract: Methods and apparatus are provided for cleaning and passivating laser discharge chambers with plasmas. In one embodiment, an oxygen based plasma is formed in a plasma source external to the laser discharge chamber by applying a radiofrequency signal to oxygen containing gases. The oxygen based plasma is drawn into the laser discharge chamber, where it reacts with contaminants and cleans internal surfaces. After cleaning, a fluorine based plasma is formed in the plasma source and drawn into the laser discharge chamber to passivate internal surfaces. In another embodiment, cleaning with the oxygen based plasma is not used since some level of cleaning is accomplished with the fluorine based plasma. In another embodiment, oxygen based plasmas and fluorine based plasmas are formed in the laser discharge chamber by applying a radiofrequency signal to a laser discharge chamber electrode.

Abstract: The present invention provides gas discharge laser systems capable of reliable long-term operation in a production line capacity at repetition rates in the range of 6,000 to 10,0000 pulses power second. Preferred embodiments are configured as KrF, ArF and F2 lasers used for light sources for integrated circuit lithography. Improvements include a modified high voltage power supply capable for charging an initial capacitor of a magnetic compression pulse power system to precise target voltages 6,000 to 10,0000 times per second and a feedback control for monitoring pulse energy and determining the target voltages on a pulse-by-pulse basis. Several techniques are disclosed for removing discharge created debris from the discharge region between the laser electrodes during the intervals between discharges. In one embodiment the width of the discharge region is reduced from about 3 mm to about 1 mm so that a gas circulation system designed for 4,000 Hz operation could be utilized for 10,000 Hz operation.

Abstract: A wavemeter and method for measuring bandwidth for a high repetition rate gas discharge laser having an output laser bean comprising a pulsed output of greater than or equal to 15 mJ per pulse, sub-nanometer bandwidth tuning range pulses having a femptometer bandwidth precision and tens of femptometers bandwidth accuracy range, for measuring bandwidth on a pulse to pulse basis at pulse repetition rates of 4000Hz and above, is disclosed which may comprise a focusing lens having a focal length; an optical interferometer creating an interference fringe pattern; an optical detection means positioned at the focal length from the focusing lens; and a bandwidth calculator calculating bandwidth from the position of interference fringes in the interference fringe pattern incident on the optical detection means, defining a DID and a DOOD, the respective distances between a pair of first fringe borders and between a pair of second fringe borders in the interference pattern on an axis of the interference pattern, and acc