Abstract: A body of semiconductor material having a first surface and a second surface spaced from the first surface includes a first layer along the first surface, a second layer along the second surface, a third layer between and contiguous to the first and second layers. The third layer is of a conductivity type opposite that of the first and second layers so as to form first and second P-N junctions respectively therebetween. The thickness of the third layer is at least twice the minority carrier diffusion length of the semiconductor material, so that carriers generated within the third layer have a high probability of being collected by one of the P-N junctions. The body includes means for electrically connecting the first and second P-N junctions and means for transferring the carriers collected at the first P-N junction to a portion of the first surface.

Abstract: A PIN or Schottky barrier semiconductor device having a body of amorphous silicon fabricated by a glow discharge is operated under forward bias conditions resulting in the emission of radiation from the device.

Abstract: An amorphous silicon material, fabricated by the process of a glow discharge in silane, is utilized as the body of semiconductor devices.

Abstract: A nickel cathode has a nickel oxide layer on its surfaces. A plurality of spaced apart grooves are in the nickel oxide layer and extend into the nickel. The cathode can be utilized in a water photolysis apparatus which also includes an N type photocatalytic semiconductor anode. Both the cathode and anode are in an aqueous basic electrolyte solution. The anode and cathode are electrically biased by a solar cell. The biasing potential of the solar cell raises the voltage potential of the cathode and lowers the Fermi level of the anode.

Abstract: An electron discharge tube comprises a photocathode, a dynode, a mesh having openings of non-uniform sizes on the dynode, and an anode, all in an evacuated tube. The mesh comprises a plurality of spaced first elongated elements of electrically conducting material and a plurality of spaced second elongated elements of electrically conducting material, intersecting to form openings of non-uniform sizes.

Abstract: A thin layer of semiconductor material with an extremely smooth surface can be grown on a substrate by liquid phase epitaxy. When the growing solution contacts the surface of the substrate, the substrate is at a lower temperature than the solution. The temperature difference should be less than 1.degree. C and depends upon the desired degree of smoothness. Both the substrate and the solution are then cooled to permit deposition of the layer.

Abstract: A layer of electrically insulating material is coated on a reflector. Granular semiconductor particles are uniformly dispersed in the layer of electrically insulating material. The combination forms an efficient absorber for high temperature photothermal conversion of solar energy.

Abstract: An electroluminescent semiconductor device having an optical axis includes two cylindrical surface segments spaced from and opposite each other. One of the cylindrical surface segments is the light emitting surface with a center of curvature C.sub.1 and a focal point, f, on the optical axis. The other cylindrical surface segment is a light reflecting surface having a center of curvature C.sub.2 on the optical axis. The electroaluminescent device has a pair of flat surfaces, spaced from each other and substantially perpendicular to the light emitting and reflecting surfaces. On one of the flat surfaces is a first electrical contact. On a portion of the opposite flat surface is a second electrical contact which is positioned along the optical axis on or between the center of curvature C.sub.1 and the focal point f. Light is generated in the electroluminescent device in the area of the second contact. Preferably, if the focal point f and center of curvature C.sub.