Patents Represented by Attorney D. R. McGlynn

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  • Method of fabricating an SOS island edge passivation structure
    Patent number: 4242156
    Abstract: A silicon-on-sapphire semiconductor structure, and method of fabricating such structure, in which a silicon nitride layer is provided over the oxide layer. The silicon nitride layer is disposed over the upper edge of the silicon island, and acts to prevent gate oxide breakdown.
    Type: Grant
    Filed: October 15, 1979
    Date of Patent: December 30, 1980
    Assignee: Rockwell International Corporation
    Inventor: John L. Peel