Abstract: A hybrid method of programming a non-volatile memory cell to a final programmed state is described. The method described is a more robust protocol suitable for reliably programming selected memory cells while eliminating programming disturbs. The hybrid method comprises programming the non-volatile memory cell to a first state according to a first coarse programming mechanism, and programming the non-volatile memory cell according to a second different more precise programming mechanism thereby completing the programming of the non-volatile memory cell to the final programmed state. Additionally, the described method is particularly advantageous for programming multilevel chips.
Type:
Grant
Filed:
September 26, 2006
Date of Patent:
June 14, 2011
Assignee:
SanDisk Corporation
Inventors:
Dana Lee, Yingda Dong, Changyuan Chen, Jeffrey Lutze