Abstract: A method for utilizing dispatch queues operates in a data processing system that has multiple processors, an operating system, and an application with multiple threads. According to that method, a dedicated dispatch queue and a general dispatch queue are created at an application level, with the dedicated dispatch queue being dedicated to a task control block (TCB) of the data processing system. In response to determining that the TCB is available and the dedicated dispatch queue is not empty, a thread is dispatched from the dedicated dispatch queue to the available TCB for execution. In response to determining that the TCB is available and the dedicated dispatch queue is empty, a thread is dispatched from the general dispatch queue to the available TCB for execution. In an illustrative embodiment, bound threads are distinguished from unbound threads, the bound threads are scheduled only on the dedicated dispatch queue, and the unbound threads are scheduled only on the general dispatch queue.

Abstract: Disclosed is an automated data storage library for storing and retrieving data storage media in a plurality of storage slots, for a host processor. At least one drive unit is coupled to the host processor for reading and/or writing data on the data storage media. A library manager includes a stored table for identifying the data storage media stored in the storage slots, the stored table indicating artificial scaling of the data storage capacity of selected data storage media to selected values less than the actual data storage capacity thereof. The stored table also stores indicators of attributes of the library with respect to ones of the data storage media, such as indicating that the drive unit is to communicate at the drive/host interface in a specific protocol.

Abstract: Emulation of a small computer system interface (SCSI) library storage is provided in a virtual data storage subsystem having an automated tape library. This allows the ability to access or store a logical volume of data. Medium changer commands as used in SCSI and other open system interfaces are mapped to library function commands as commonly used in an enterprise server environment. This allows full transparent usage of virtual tape storage available in the enterprise server environment as open system storage.

Abstract: A secure communication circuit for use with a data communication interconnect adapter and method of operation thereof. The secure communication circuit includes a first data buffer coupled to a data input terminal, an encoder/decoder coupled to the first data buffer, a second data buffer coupled to the encoder/decoder and a switching device coupled to a data output terminal. The switching device is couplable to either the first or second data buffers. A controller, coupled to the (switching device, selectively connects the switching device to the first or second data buffers. In a related embodiment, the secure communication circuit further includes a first serializer/deserializer (SERDES) coupled to the data input and a second SERDES coupled to the switching device.

Abstract: A method for preserving data resident in a volatile memory of a data storage unit having at least one rotatable disk platter in the event of an interruption of a primary supply power. The method includes monitoring the status of the primary supply power to the data storage unit. Following the detection of a loss of the primary supply power, kinetic energy inherent in the spinning disk platter is converted into electrical energy. Electrical energy derived from the kinetic energy of the disk platter is then utilized to power the data storage unit to write the data in the volatile memory to an outer-most track of the rotatable disk platter.

Abstract: A multiplexing system and method for servicing serially linked targets or RAID devices. The multiplexing system couples service interfaces from various targets and devices. The multiplexing system provides a single service link to a single service unit interface. The single service link allows easy access/communications or remote access/communications to an individual target or disk drive within the RAID system. A service unit is directly or remotely coupled to the service unit interface. The multiplexing system has an outgoing multiplexer, an in-going multiplexer, and a multiplexer controller. The service unit communicates with the multiplexing system to select the desired target or disk drive to be serviced. The multiplexer controller detects incoming select target commands and compares incoming target address information with a presently defined multiplexer controller target address information.

Abstract: A serial differential link glitcher system and method which allow for verification of error recovery by an interfaced or linked architecture system. The system and method provide accurate, reliable, and more assured fault simulation, such as noisy interface and dirty link simulations, within an interfaced or linked architecture system for verification of such error recovery and verifies and checks data at a lower level between interfaced devices. The system and method verify disparity errors between interfaced devices and also perform verification of error recovery between electrically linked devices or optically linked devices. At least two devices are coupled together by communication lines. Normal mode allows for normal operation of and normal communication between the at least two devices, and glitch mode provides fault simulation and disparity errors and phase inversion between the at least two devices for testing error recovery of the system.

Abstract: A method and apparatus which produces a semitransparent cursor for a video display presenting simultaneous viewing access to both the cursor and the underlying image information. At the on-screen location of the cursor, the viewer is able to simultaneously view and distinguish between the cursor and the underlying graphical data. In one form, the method includes the steps of obtaining the red, green, and blue video pixel data for each pixel representing at least a portion of the cursor; halving the numerical value of each datum of red, green, and blue video pixel data; injecting a binary value into the most significant bit of each datum to obtain modified red, green, and blue video pixel data; and providing modified red, green, and blue video pixel data to a video display.

Abstract: A nozzle apparatus and method of use for extruding a conductive paste through a stencil or screen onto a substrate are disclosed. The nozzle includes a body and a conformable insert for contacting the screen. The method comprises the steps of obtaining a substrate and a patterned screen, contacting the screen with a nozzle comprising a nozzle body and a conformable nozzle insert, and extruding a paste through the nozzle and screen onto the substrate. The apparatus and method are particularly useful for producing patterned lines from extruded pastes in the manufacture of microelectronic components, and are even more particularly adapted for use in producing patterns in substrates having high aspect ratio openings.

Abstract: Process steps are provided to analyze image placement on a pre-distorted lithographic mask produced by a lithographic system. Obtain metrology data, form a reference array equal to the design coordinates of the metrology sites. Align the metrology data grid coordinate system to remove rigid body components from the metrology data offsets. Parse the metrology data into one or more correction areas. If the mask is to have its disposition provided according to the statistics of the residual errors in the correction areas, then compute the statistics and compare them to the specifications. Otherwise concatenate the local reference arrays summed with their corresponding correction area center coordinates to form reference mark design location arrays. Concatenate temporary arrays with the mask offsets free of pre-distortion into an array of mask offsets corresponding to desired disposition areas and compute statistical distribution of residual errors in array(s) of mask offsets for disposition.

Abstract: A method is described for reducing linewidth variations in the patterning of photoresists having non-uniform film thickness, comprising overcoating the photoresist with sufficient thickness of a nonreactive coating composition having a refractive index which within .+-.15 percent of that of the refractive index of the photoreist composition; said overcoating being of sufficient thickness such that it will result in about a one wave length phase lag between the oblique rays and the normal incident rays reflecting back from the substrate, upon arriving back at the resist surface. The effective thickness of the overcoating is a function of the exposure wavelength and the size of the numerical aperture of the objective lens used for expose. The overcoating compositions capable of providing the so defined refractive indices ranges, are described. For example, a polyacrylic acid coating composition having a refractive index of 1.5 at a thickness of 2.0 .mu.

Abstract: A method of forming interlevel studs in an insulating layer on a semiconductor wafer. First, a conformal BPSG layer is formed on a Front End of the Line (FEOL) semiconductor structure. Vias are opened through the BPSG layer to the FEOL structure. A layer of poly is formed (deposited) on the BPSG layer, filling the vias. The poly layer may be insitu doped poly or implanted after it is deposited. The wafer is annealed to diffuse dopant from the poly to form diffusions wherever the poly contacts the substrate. A non-selective slurry of colloidal silica and at least 1% ammonium hydroxide is used to chem-mech polish the poly from the BPSG layer and, simultaneously, planarize the BPSG layer.

Abstract: In the manufacturing of 16 Mbit DRAM chips, the deep trench formation process in a silicon wafer by plasma etching is a very critical step when the etching gas includes 0.sub.2. As a result, the monitoring of the trench formation process and thus the etch end point determination is quite difficult. The disclosed monitoring method is based on zero order interferometry. The wafer is placed in a plasma etcher and a plasma is created. A large area of the wafer is illuminated through a view port by a radiation of a specified wavelength at a normal angle of incidence. The reflected light is collected then applied to a spectrometer to generate a primary signal S of the interferometric type. Next, this signal is applied in parallel to two filters. A low-pass filter produces a first secondary signal S1 that contains data related to the deposition rate and the redeposited layer thickness. A band-pass filter produces a second secondary signal S2 that contains data related to the trench etch rate and depth.

Abstract: A composition and methods for the use and manufacture thereof are provided for a polymeric dye. The composition comprises one or more aminoaromatic chromophores in conjunction with polymers having an anhydride group or the reaction products thereof. The composition is particularly useful as an underlaying antireflective coating with microlithographic photoresists for the absorbtion of near or deep ultraviolet radiation.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and recording a plurality of values of the electrical characteristic as a function of time during etching. From the plurality of recorded values and corresponding times, instantaneous etch rates, average etch rates, and etching end points may be determined. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

Abstract: A method for correcting placement errors in a lithography system, and a system therefor, are disclosed. The method comprises the steps of obtaining metrology data of sufficient density to smoothly map an error to be corrected, deriving a metrology data grid coordinate system from the data, aligning the metrology data grid coordinate system to remove rigid body components, and for each of a plurality of lithographic fields: identifying a number of metrology sites nearest to the center of the field; establishing a reference grid coordinate system coinciding with the lithographic field; determining at least one correction factor which minimizes the residual errors; and applying at least one correction factor for at least one field to the first lithography system to correct a placement error. Such a method and system are particularly useful for error correction in e beam lithography tools.

Abstract: A composition and methods for the use and manufacture thereof are provided for a polymeric dye. The composition comprises one or more aminoaromatic chromophores in conjunction with polymers having an anhydride group or the reaction products thereof. The composition is particularly useful as an underlaying antireflective coating with microlithographic photoresists for the absorbtion of near or deep ultraviolet radiation.

Abstract: A method of forming metal patterns in an insulating layer on a semiconductor wafer. After Chem-Mech Polishing (CMP) the insulating layer and forming studs in a planarized insulating layer, the polished surface is chem-mech polished with a touch-up slurry. The touch-up slurry has a nearly identical removal rate for the stud material (tungsten or titanium) as for the insulating material (SiO.sub.2). The preferred non-selective slurry is fumed colloidal silica, 8% by weight, and 20 g/l ammonium persulfate.

Abstract: A semi-conductor packaging structure and a method to reduce the seal strain of the package are disclosed. The structure comprises a cap, substrate, seal and the cap and substrate have a predetermined TCE mismatch. The TCE mismatch between the cap and substrate is predetermined to minimize the seal strain during power-on and power-off use conditions. Preferably, the device has a substrate comprises a ceramic material, a cap with a thermal conductivity of at least about 100 W/m-K. A method of selecting a cap material is disclosed.

Abstract: An improved process for depositing a conductive thin film upon an integrated circuit substrate by collimated sputtering is disclosed. The sputtered films are alloys of aluminum; a preferred alloying metal is magnesium. The sputtered films of the invention have a more uniform orientation of grains than sputtered aluminum copper silicon alloy films. Such processes are especially useful in the fabrication of integrated circuit devices having aluminum alloy wiring elements.