Abstract: Mixed data rates in a memory system is disclosed. The system includes at least one semiconductor memory device and another device defining a ring topology. The semiconductor memory device includes input circuitry for receiving a clock signal having a frequency at least substantially equal to a frequency x. A first set of circuit elements are each clocked by a same or respective first internal signal having a frequency at least substantially equal to the frequency x. A second set of circuit elements are each clocked by a same or a respective second internal signal having a frequency at least substantially double that of the frequency x.

Abstract: A switch includes a reserved pool of buffers in a shared memory. The reserved pool of buffers is reserved for exclusive use by an egress port. The switch includes pool select logic which selects a free buffer from the reserved pool for storing data received from an ingress port to be forwarded to the egress port. The shared memory also includes a shared pool of buffers. The shared pool of buffers is shared by a plurality of egress ports. The pool select logic selects a free buffer in the shared pool upon detecting no free buffer in the reserved pool. The shared memory may also include a multicast pool of buffers. The multicast pool of buffers is shared by a plurality of egress ports. The pool select logic selects a free buffer in the multicast pool upon detecting an IP Multicast data packet received from an ingress port.

Abstract: Power supplies in flash memory devices are disclosed. A first section of a flash memory device includes non-volatile memory for storing data. A second section of the flash memory device includes at least first and second pumping circuits. The first pumping circuit receives a first voltage and produces, at an output of the first pumping circuit, a second voltage at a second voltage level that is higher than the first voltage level. The second pumping circuit has an input coupled to the first pumping circuit output for cooperatively employing the first pumping circuit to pump up from a voltage greater than the first voltage to produce a third voltage at a third voltage level that is higher than the second voltage level.

Abstract: A nonvolatile memory having a non-power of two memory capacity is provided. The nonvolatile memory device includes at least one plane. The plane includes a plurality of blocks with each of the blocks divided into a number of pages and each of the blocks defined along a first dimension by a first number of memory cells for storing data, and along a second dimension of by a second number of memory cells for storing data. The nonvolatile memory has a non-power of two capacity proportionally related to a total number of memory cells in said plane. The nonvolatile memory also includes a plurality of row decoders. An at least substantially one-to-one relationship exists, in the memory device, for number of row decoders to number of pages. Each of the row decoders is configured to facilitate a read operation on an associated page of the memory device.

Abstract: Reducing pool starvation in a switch is disclosed. The switch includes a plurality of egress ports, and a reserved pool of buffers in a shared memory. The reserved pool of buffers is one of a number of reserved pools of buffers, and the reserved pool of buffers is reserved for one of the egress ports. A shared pool of buffers and a multicast pool of buffers are in the shared memory. The shared pool of buffers is shared by the egress ports.