Abstract: A structure and method for dissipating charges comprising an underlying dielectric layer disposed over capacitor plates of sensor circuitry a gap being formed conformally between adjacent plates and a topographic discharge grid over the underlying dielectric layer and wherein the topographic discharge grid fills at least a portion of the gap between the plates over the dielectric layer and diffuses electrostatic charges at the surface of the integrated circuit.

Abstract: A method is provided for forming an improved contact opening of a semiconductor integrated circuit, and an integrated circuit formed according to the same. Planarization of the semiconductor structure is maximized and misalignment of contact openings is tolerated by first forming a conductive structure over a portion of a first body. A thin dielectric layer is formed at least partially over the conductive structure. A thick film, having a high etch selectivity to the thin dielectric layer, is formed over the dielectric layer. The thick film is patterned and etched to form a stack substantially over the conductive structure. An insulation layer is formed over the thin dielectric layer and the stack wherein the stack has a relatively high etch selectivity to the insulation layer. The insulation layer is etched back to expose an upper surface of the stack.