Abstract: A stack that includes non-volatile memory devices is disclosed. One of the non-volatile memory devices in the stack is a master device, and the remaining memory device or devices is a slave device(s).

Abstract: Mixed data rates in a memory system is disclosed. The system includes at least one semiconductor memory device and another device defining a ring topology. The semiconductor memory device includes input circuitry for receiving a clock signal having a frequency at least substantially equal to a frequency x. A first set of circuit elements are each clocked by a same or respective first internal signal having a frequency at least substantially equal to the frequency x. A second set of circuit elements are each clocked by a same or a respective second internal signal having a frequency at least substantially double that of the frequency x.

Abstract: A switch includes a reserved pool of buffers in a shared memory. The reserved pool of buffers is reserved for exclusive use by an egress port. The switch includes pool select logic which selects a free buffer from the reserved pool for storing data received from an ingress port to be forwarded to the egress port. The shared memory also includes a shared pool of buffers. The shared pool of buffers is shared by a plurality of egress ports. The pool select logic selects a free buffer in the shared pool upon detecting no free buffer in the reserved pool. The shared memory may also include a multicast pool of buffers. The multicast pool of buffers is shared by a plurality of egress ports. The pool select logic selects a free buffer in the multicast pool upon detecting an IP Multicast data packet received from an ingress port.

Abstract: A stack that includes non-volatile memory devices is disclosed. One of the non-volatile memory devices in the stack is a master device, and the remaining memory device or devices is a slave device(s).

Abstract: A memory system circuit and method therefor are disclosed. The circuit is adapted to detect a transition in a data timing signal from an indeterminate logic level to a selected one of a high logic level and a low logic level. The circuit includes a comparator having a first input, a second input and an output. The first and second inputs receive the data timing signal and a reference voltage respectively. The output changes logic levels in response to a change in polarity of a voltage difference between the voltage of the timing signal and the reference voltage. The reference voltage is sufficiently closer to the selected one of the logic levels as compared to the other of the logic levels so as to at least substantially prevent potential false positive detections.

Abstract: Power supplies in flash memory devices are disclosed. A first section of a flash memory device includes non-volatile memory for storing data. A second section of the flash memory device includes at least first and second pumping circuits. The first pumping circuit receives a first voltage and produces, at an output of the first pumping circuit, a second voltage at a second voltage level that is higher than the first voltage level. The second pumping circuit has an input coupled to the first pumping circuit output for cooperatively employing the first pumping circuit to pump up from a voltage greater than the first voltage to produce a third voltage at a third voltage level that is higher than the second voltage level.

Abstract: A nonvolatile memory having a non-power of two memory capacity is provided. The nonvolatile memory device includes at least one plane. The plane includes a plurality of blocks with each of the blocks divided into a number of pages and each of the blocks defined along a first dimension by a first number of memory cells for storing data, and along a second dimension of by a second number of memory cells for storing data. The nonvolatile memory has a non-power of two capacity proportionally related to a total number of memory cells in said plane. The nonvolatile memory also includes a plurality of row decoders. An at least substantially one-to-one relationship exists, in the memory device, for number of row decoders to number of pages. Each of the row decoders is configured to facilitate a read operation on an associated page of the memory device.

Abstract: Reducing pool starvation in a switch is disclosed. The switch includes a plurality of egress ports, and a reserved pool of buffers in a shared memory. The reserved pool of buffers is one of a number of reserved pools of buffers, and the reserved pool of buffers is reserved for one of the egress ports. A shared pool of buffers and a multicast pool of buffers are in the shared memory. The shared pool of buffers is shared by the egress ports.

Abstract: A matchline sense circuit for detecting a rising voltage on a matchline of a CAM array is disclosed. The circuit initially precharges a matchline to ground before turning on a current source to supply current to the matchline and raise the voltage of the matchline. A reference matchline sense circuit generates a self-timed control signal to keep the current supply turned on for a predetermined duration of time. Sensed data on the matchlines are latched after the current source is turned off and the matchlines are precharged to ground. Because the matchline sense circuit of the present invention precharges the matchlines to ground instead of the supply voltage, VDD, less power is consumed. By sensing the rise of the matchline voltage to an n-channel transistor threshold potential, the matchline sensing operation speed is increased.