Abstract: The present invention is a method to eliminate the influence of clamp dimensional changes on the displacement measurement during the measurement of the coefficient of thermal expansion (CTE) of samples in tension. In a first embodiment clamp dimensional changes can be eliminated by making clamps from a material with near zero CTEs. In another embodiment clamp dimensional changes can be reduced by minimizing the CTE of the clamp material. Finally clamp dimensional changes are taken into account. This is achieved directly by subtracting a prerecorded baseline from the measurements; or by determining the CTE measurement for various sample lengths and obtaining the slope of a straight line through the points on a MD (measured displacement)/DT (temperature range of displacement measurement) versus sample length plot. The slope is the corrected CTE.

Abstract: Disclosed is a printed circuit board, and a method of preparing a printed circuit board, which possesses a coefficient of thermal expansion substantially similar to that of silicon for use in direct semiconductor chip attach structures and similar solder mounted devices. The printed circuit board is fabricated from prepreg having a thermosetting resin and a reinforcement layer consisting of non-woven aramid mat or a liquid crystalline polymer paper. The composite dielectric layer optionally includes plated through holes which are either filled or non-filled, and one or more thin film redistribution layers to provide high density electronic packages. The design places the solder pads at the PTHs where needed. The redistribution layer can be formed using photoimagable dielectrics or laminated controlled-CTE composites and laser via imaging.

Abstract: A data processing system including an improved method and apparatus for the arrangement and interconnection between electronic devices to improve system cycle time. The apparatus possesses a) a plurality of: memory SIMMs, memory devices on the noted memory SIMMs and registers; b) a clock; c) means for connecting signals between the memory devices on the memory SIMMs and the registers; and d) means for connecting signals between the memory devices on the memory SIMMs and the clocks.