Patents Represented by Attorney, Agent or Law Firm Daniel P. McLoughlin
  • Method of forming a well isolation bipolar transistor
    Patent number: 6432789
    Abstract: The present invention relates to an integrated circuit including a lateral well isolation bipolar transistor. A first portion of the upper internal periphery of the insulating well is hollowed and filled with polysilicon having the same conductivity type as the transistor base, to form a base contacting region. A second portion of the upper internal periphery of the insulating well is hollowed and filled with polysilicon having the same conductivity type as the transistor emitter, to form an emitter contacting region.
    Type: Grant
    Filed: November 30, 2000
    Date of Patent: August 13, 2002
    Assignee: SGS-Thomson Microelectronics S.A
    Inventor: Yvon Gris