Abstract: An EPROM cell comprises an MOS device including a floating gate electrode overlying, and ohmically insulated from, the channel region of the MOS device, and a separate diode including a p-n junction having a substrate surface intercept. A floating gate electrode overlies the diode p-n junction intercept and is ohmically isolated therefrom by an intervening insulating layer. Writing of data into the floating gate electrode of the MOS device is achieved by causing a voltage breakdown across the diode p-n junction and the flow of high energy electrons across the junction. A voltage is simultaneously applied to the diode gate electrode thereby attracting some of the high energy electrons through the overlying insulating layer into the diode floating gate electrode. The diode gate electrode is ohmically connected to the MOS floating gate electrode on which some of the electrons are stored for affecting the turn-on, turn-off characteristics of the MOS device.

Abstract: A gas phase plasma cleaning method and apparatus is shown for removing contaminants from the surface of exposed metallic parts on integrated circuits (IC's). A two step method is shown using a defined gas mixture of argon and oxygen, and ammonia and hydrogen. The gases are separately introduced into a plasma chamber. The argon oxygen mixture is used to remove carbonatious material by chemical reaction and by milling. The ammonia hydrogen mixture is introduced to chemically remove and reduce oxides and phosphates. Surface energies are increased to permit improved adhesion of inks. Additionally, intermediate oxides formed after the plasma exposure prevent complete regrowth of the normally passivating oxide layer.