Patents Represented by Attorney, Agent or Law Firm Darryl L. Neff
  • Method for reducing surface oxide in polysilicon processing
    Patent number: 6436760
    Abstract: A method for removing surface oxide from polysilicon includes depositing a very thin layer of germanium (e.g. monolayers in thickness) over the polysilicon immediately before a subsequent polysilicon deposition step, and then heating the germanium-coated polysilicon in a vacuum to sublime (remove) volatile germanium oxide. This method is applied to formation of a trench capacitor, which uses either doped amorphous silicon or doped amorphous SiGe material in the formation of the electrodes.
    Type: Grant
    Filed: April 19, 2001
    Date of Patent: August 20, 2002
    Assignee: International Business Machines Corporation
    Inventors: Kwong H. Wong, Ashima B. Chakravarti, Satya N. Chakravarti, Subramanian S. Iyer