Abstract: A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350° C.
Type:
Grant
Filed:
May 27, 2008
Date of Patent:
December 21, 2010
Assignee:
Intel Corporation
Inventors:
Robert J. Gleixner, Donald Danielson, Patrick M. Paluda, Rajan Naik
Abstract: Some embodiments of the present invention include selectively inducing back side stress opposite transistor regions to optimize transistor performance.
Type:
Grant
Filed:
April 3, 2008
Date of Patent:
October 26, 2010
Assignee:
Intel Corporation
Inventors:
Gilroy J. Vandentop, Rajashree Baskaran