Abstract: An improved gate oxide protected level shifter is provided which has a higher speed of operation than is traditionally available. The level shifter includes a first capacitor coupled between a first output terminal and the input of an inverter and a second capacitor coupled between a first node and the output of the inverter. As a result, the speed of the transitions at the gates of the pair of cross-coupled P-channel MOS transistors is increased several times.

Abstract: A fixture for mounting and aligning a heat sink to a PGA chip package disposed in a Murphy-type carrier includes a substantially flat, rectangularly-shaped plate (51), a first end portion (53a), and a second end portion (53b). The plate member (51) has a top surface (54) and a bottom surface (52). The plate member (51) further includes a top side edge (44), a bottom side edge (46), a left side edge (48) and a right side edge (50). Retaining means are formed in a central portion of the bottom surface (52) of the plate member (51) to releasably hold the heat sink. The first and second end portions (53a, 53b) are pivotally connected on opposite sides of two of the four side edges (44-50) of the plate member (51) and include hooked portions (70a, 70b) for releasably engaging a bottom surface of the Murphy-type carrier.