Abstract: A method for manufacturing a programmable chalcogenide fuse within a semiconductor device is disclosed. A resistor is initially formed on a substrate. Then, a chalcogenide fuse is formed on top of the resistor. Finally, a conductive layer is deposited on top of the chalcogenide fuse for providing electrical conduction to the chalcogenide fuse.
Type:
Grant
Filed:
June 26, 2002
Date of Patent:
February 17, 2004
Assignee:
BAE Systems, Information and Electronic Systems Integration,
Inc.
Inventors:
John D. Davis, Thomas J. McIntyre, John C. Rodgers, Keith K. Sturcken, Peter W. Spreen, Tushar K. Shah