Abstract: A system 100 which provides asynchronous SRAM functionality with a DRAM device. The system 100 includes an address transition detector circuit 102, a memory clock generator circuit 104, a refresh timer 106, a refresh address counter 108, a memory access controller 110, a memory control sequencer 112, an address buffer 114, a write data buffer 116, a three-input address multiplexer 118, a two-input data multiplexer 120, inverters 122, 124, 126, and 128, AND gates 130, 132, and 134, NOR gates 136, 138, 140, and 142, OR gate 156, and a DRAM array 144 of memory cells. The components of system 100 cooperate to selectively interrupt external memory commands, such as read and write commands, in order to perform refresh operations on array 144.