Abstract: A method enables the prediction of the likely alertness level of an individual at a given point in time based upon the analysis of certain biological and other parameters associated with the individual subject including, circadian phase of the biological clock, accumulated acute or chronic sleep deprivation, shift commencement and termination time, time of last sleep, environmental light, etc. Among other advantages, the method facilitates the creation of bio-compatible schedules for shift workers by providing an accurate model of the likely alertness level of the individual on a specific schedule.

Abstract: A method and apparatus for preventing oscillations in high-current electron guns. Spurious oscillations frequently occur as a result of interaction of the electron stream with the fields of resonant modes of the gun structure. The resonant impedances of the modes are lowered by damping with lossy dielectric or resistive materials which are suited to the high temperature and vacuum environment of electron guns. The lossy materials are located in places shielded from high electric fields applied to the gun. Lossy dielectric materials which are D.C. insulators may be used as insulating supports for gun electrodes.

Abstract: The present invention relates in general to methods for making pick-up screens for X-ray image intensifier tubes and, more particularly, to an improved method wherein the X-ray fluorescent phosphor screen element is formed by evaporation of an alkali metal halide material in vacuum and condensing the evaporated material on an X-ray transparent portion of the X-ray intensifier tube, whereby a curved X-ray image pick-up screen is formed which has improved quantum efficiency and resolution. Such improved X-ray image intensifier tubes are especially useful for, but not limited in use to, X-ray systems and for intensifying gamma ray images obtained in applications of nuclear medicine.

Abstract: A very thin high quality active layer of a III-V material such as GaAs is formed on a temporary substrate on which an etch-resistant stopping layer of a material such as AlGaAs has been previously formed. Passivating layers are formed on the active layer, and the active layer is interfaced with a material which forms a permanent substrate. The temporary substrate is etched away with an etchant which is stopped by the stopping layer, following which the stopping layer is removed by etching with HF. The material in the active layer acts as a chemical stop for the HF, and consequently the etching process stops automaticaly at the boundary of the active layer, leaving that layer in the thin high-quality form in which it is grown. The etching rate of the stopping layer can be controlled by the proportion of Al in that layer.

Abstract: An interdigital delay line for crossed field tubes has vanes extending from their interaction faces to a back wall. One end of each vane extends to the end of the face. The other end is cut out behind the interaction face leaving the face projecting. The interaction impedance is almost as high as that of a line with fingers supported by stubs at their centers, while the thermal dissipation is higher, approaching that of a line with vanes extending over the entire length of the fingers.