Abstract: In one embodiment, a dual-mode earphone is provided, comprising a first earbud including a speaker with a diaphragm and at least one acoustic port in front of the diaphragm, and a cap in front of the speaker. The speaker or the cap is configured to move relative to the other for opening and closing the acoustic port in one embodiment and a movable seal is provided in another embodiment. The earphone further includes a second earbud housing operably coupled to the first earbud opposite the speaker. A method for providing acoustic equalization in a dual-mode earphone is also disclosed.

Abstract: A system, apparatus, and method are provided for automatically provisioning wireless local area network (LAN) access point and/or hotspot information, Voice over Internet Protocol (VoIP) service provider information, and VoIP account information on a service provider's Web page to configure a wireless VoIP headset for use.

Abstract: Apparatus for acquiring an image of a specimen comprising a cassette having an optical portion holding a specimen array on a TIR surface and being removably matable to a processing portion having a polarized light beam source and a processing polarization-sensitive portion to image the spatially distributed charges in polarization of the specimen array. In one form the array optical portion comprises a transparent slide having a bottom surface with first and second gratings located to direct polarized light to the TIR surface and to direct light reflected by that (TIR) surface to an imager, respectively. The apparatus may include a flow cell integral with the optical portion as well as means for selecting the direction and wavelength of the polarized light.

Abstract: A lock plate and a movable plate are provided to fix a seat at an optional position, and an actuator is provided between the seat and the movable plate. The seat is moved to the rear of a vehicle body in an initial stage of impact by the actuator. Acceleration is generated in the seat through impact abutment of a collapsible tube in the actuator against a piston head in an intermediate stage of impact. In a final stage of the impact, the seat is made integral with the vehicle body. The deceleration of the vehicle body and the seat and the deceleration of an occupant can be made equal to each other at an earlier timing. The apparatus can be installed by making use of a space under the seat, whereby the necessity of securing a special vacant space for installation of the apparatus can be obviated.

Abstract: A system and method for managing the use and access of digital data objects. According to the invention, control rights associated with a digital data object activate an external control object and an intercept application to intercept and monitor communications between a hosting application and a document server application associated with the creation of the digital data object. These intercepting and monitoring functions are performed without affecting or changing the hosting application or the document server application. The external control object activates an intercept application which mimics the functions of the document server application and performs user actions on the digital data object as authorized by the external control object according to the control rights associated with the digital object. By intercepting and monitoring user actions on a digital data object, the invention can control access and use of the digital data object.

Abstract: System and method for verifying the authenticity of executable images. The system includes a validator that determines a reference digital signature for an executable image using the contents of the executable image excluding those portions of the executable that are fixed-up by a program loader. The validator then subsequent to the loading of the executable image determines an authenticity digital signature to verify that the executable image has not been improperly modified. In addition, the validator ensures that each of the pointers in the executable image have not been improperly redirected.

Abstract: In a vertical internal combustion engine, comprising; a cylinder block; a cylinder head connected to an end of the cylinder block; a crankshaft extending generally vertically and rotatably supported in the cylinder block; a camshaft extending generally in parallel with the crankshaft and rotatably supported in the cylinder head; and a timing belt for connecting pulleys provided to upper end portions of the crankshaft and the camshaft so as to transmit a driving force from the crankshaft to the camshaft, a plate is attached to a top surface of the cylinder block and at least one idle pulley contacting the timing belt is rotatably supported by the plate.

Abstract: The present invention provides a method to improve adhesion of barrier, metal, dielectric interfaces. In the process flow, a first barrier material is formed on a dielectric layer and bombarded with a plasma to effectively push the barrier material into the dielectric interface while leaving a portion of the barrier material over the dielectric. A second barrier material, which may or may not be the same as the first barrier material, is then formed on the remaining first barrier material. Advantageously, the method of the present invention allows the barrier material to be pushed into the dielectric to insure excellent adhesion, which prevents chemical mechanical polishing delamination. Furthermore, the presence of the first barrier material on the sidewalls of via apertures through the dielectric can prevent Cu poisoning from sputtered Cu or CxOy.

Abstract: A method of etching nitride over oxide is provided for the formation of vertical profile nitride spacers with high uniformity while maintaining the integrity of underlying thin oxide layers. The method includes providing a first gas flow including a first fluorocarbon and a second fluorocarbon at a first ratio, applying a first quantity of power to the first gas flow to create a first plasma, etching a first portion of a silicon nitride layer with the first plasma, providing a second gas flow including the first fluorocarbon and the second fluorocarbon at a second ratio greater than the first ratio, applying a second quantity of power to the second gas flow to create a second plasma, and etching a second portion of the silicon nitride layer with the second plasma.

Abstract: A method and system are provided for delivering a source gas to a processing chamber. A source gas delivery method includes providing a precursor chamber configured to hold precursor vapor, providing a saturated precursor vapor at a selected pressure within the precursor chamber, and flowing or diffusing saturated precursor vapor from the precursor chamber to the processing chamber until a selected pressure is provided in the processing chamber. A source gas delivery system includes a precursor chamber configured to hold precursor vapor, a heat source for heating a precursor liquid to provide saturated precursor vapor at a selected pressure within the precursor chamber, and a vapor pathway allowing saturated precursor vapor to enter a processing chamber until a selected pressure is provided in the processing chamber. Advantageously, the present invention allows for improved precursor vapor delivery and enhanced control over thin film deposition with less waste of precursor material.

Abstract: A method and structure to form shallow trench isolation regions without trench oxide grooving is provided. In particular, a method includes a two-step oxide process in which an oxide liner lines the inside surface of a trench and the trench is filled with a bulk oxide layer, preferably using a high density plasma chemical vapor deposition (HDP-CVD) process. The oxide liner and the bulk oxide layer are formed to have similar etch rates. Thus, when etching the oxide liner and the bulk oxide layer between stack structures, a common dielectric top surface is formed that is substantially planar and without grooves.

Abstract: In a conductive coil contact member having at least one tapered end consisting of a plurality of turns of coil wire having a progressively smaller coil radius toward a free end thereof, the coil wire comprises a core wire and at least one highly electrically conductive layer formed over the core wire, a last turn of the coil wire at the free end having a smaller coil radius than would be possible by coiling the coil wire. Thus, the core wire is coiled to a smallest possible radius in the last turn, and the coil wire diameter is thereafter increased by forming layers formed by plating or other similar methods. The final result is that the last turn of the coil wire at the free end has a smaller coil radius than would be possible by coiling the coil wire. The reduction in the coil radius of the last turn contributes to the improvement in the positional accuracy of the free end of the tapered end of the conductive coil contact member.

Abstract: Dynamic Random Access Memory (DRAM) cells are formed in a P well formed in a biased deep N well (DNW). PMOS transistors are formed in N wells. The NMOS channels stop implant mask is modified not to be a reverse of the N well mask in order to block the channels stop implant from an N+ contact region used for DNW biasing. In DRAMs and other integrated circuits, a minimal spacing requirement between a well of an integrated circuit on the one hand and adjacent circuitry on the other hand is eliminated by laying out the adjacent circuitry so that the well is located adjacent to a transistor having an electrode connected to the same voltage as the voltage that biases the well. For example, in DRAMs, the minimal spacing requirement between the DNW and the read/write circuitry is eliminated by locating the DNW next to a transistor precharging the bit lines before memory accesses. One electrode of the transistor is connected to a precharge voltage.

Abstract: A method is provided for advantageously etching dielectric material between highly integrated polysilicon devices with high dielectric-to-polysilicon selectivity to expose polysilicon with minimal polysilicon loss and without photoresist lift. A wet etch solution comprising surfactant and between about 0% and about 10% NH4F is used to wet etch the dielectric material and reduce polysilicon loss thickness, polysilicon resistance ratios, and polysilicon etch rates, while increasing dielectric-to-polysilicon selectivity. Advantageously, the present invention may penetrate into increasingly small geometries of highly integrated devices and may also be used for general wet etches of dielectric material in conjunction with photoresist.