Abstract: A sealed battery case comprising: a case of formable metal; a lid for the case, the lid having an annular shroud defining the periphery of at least one opening; at least one terminal having a sealing lip at its circumference; where the terminal is crimp sealed into said annular shroud. Also described is a method of attaching a terminal in a lid opening of a battery case; the opening having an opening and an annular shroud surrounding the opening. The annular shroud is of an inner diameter slightly larger than the diameter of the opening and extending outward from the lid, and the terminal has a diameter smaller than the diameter of the opening and a sealing lip around its circumference. The sealing lip has a diameter in between the diameter of the opening and the diameter of the shroud; the method comprising the steps of: placing a seal of an insulating material; around the sealing lip; inserting the terminal into the shroud; and crimping the shroud around the seal.

Abstract: A disordered electrochemical hydrogen storage alloy comprising:(Base Alloy).sub.a Co.sub.b Mn.sub.c Al.sub.d Fe.sub.e Mo.sub.fwhere said Base Alloy comprises 0.1 to 60 atomic percent Ti, 0.1 to 25 atomic percent Zr, 0.1 to 60 atomic percent V, 0.1 to 57 atomic percent Ni, and 0.1 to 56 atomic percent Cr; b is 0 to 7 atomic percent; c is 4.5 to 8.5 atomic percent; d is 0. to 3 atomic percent; e is 0 to 2.5 atomic percent; f is 0 to 6.5 atomic percent; and a+b+c+d+e+f=100 atomic percent.

Abstract: A disordered electrochemical hydrogen storage alloy and electrochemical cells having a negative electrode comprising this alloy, where the alloy has the composition(Base Alloy).sub.a Co.sub.b Mn.sub.c Al.sub.d Fe.sub.e La.sub.f Mo.sub.gwhere Base Alloy represents a disordered multicomponent alloy having at least one structure selected from the group consisting of: amorphous; microcrystalline; polycrystalline, lacking long-range compositional order with three or more phases of said polycrystalline structure; and any combination of these structures; b is 0 to 7.5 atomic percent; c is 0.1 to 8.5 atomic percent; d is 0 to 2.5 atomic percent; e is 0.1 to 6.5 atomic percent; f is 0 to 4.5 atomic percent; g is 0 to 6.5 atomic percent; b+c+d+e+f+g>0; and a+b+c+d+e+f+g=100 atomic percent.

Abstract: An electrochemical hydrogen storage alloy having decreased hydrogen overpressure as well as other desirable operational parameters, comprising on an atomic percent basis: 14 to 22 percent vanadium; 28 to 39 percent nickel; 7 to 15 percent titanium; 15 to 34 percent zirconium; and at least one member selected from the group consisting of 0.001 to 7 percent chromium, 0.001 to 7 percent cobalt, 0.001 to 7 percent iron, 0.001 to 3.6 percent manganese, and 0.001 to 2.7 percent aluminum, wherein the atomic ratio of the vanadium to zirconium is in the range of 1:2.26 to 1:0.68. An electrochemical hydrogen storage alloy having a reduced self-discharge rate comprising an alloy having a heterogeneous, disordered microstructure resulting from changes in the mutual solubility of the elements of the alloy, wherein hydrogen in a particular phase is not easily discharged either though low surface area, or an oxide of limited porosity or catalytic property.

Abstract: A high quality, narrow band gap, hydrogenated amorphous germanium or amorphous silicon alloy material characterized by a host matrix in which all hydrogen is incorporated therein in germanium monohydride or silicon monohydride form, respectively; their mobility-lifetime product for non-equilibrium charge carriers is about 10.sup.-8 and about 10.sup.-7, respectively; their density of defect states in the band gap thereof is less than about 1.times.10.sup.17 and about 2.times.10.sup.16 /cm.sup.3, respectively; and their band gap is about 1.5 and about 0.9 eV, respectively. There is also disclosed a structure formed from a plurality of very thin layer pairs of hydrogenated amorphous germanium and amorphous silicon alloy material, each layer pair of which cooperates to provide narrow band gap material.

Abstract: An oxide type superconducting material comprising a plurality of metal species and oxygen in combined form, said superconducting material improved by the addition of a parametric modifier.

Abstract: A method for the low temperature, microwave enhanced, chemical vacuum deposition of thin film material onto a surface of a hollow member by creating a sub-atmospheric pressure condition adjacent the surface to be coated while maintaining the applicator through which microwave energy is introduced at substantially atmospheric pressure.