Abstract: A system and method for forming an adjusted estimate of scattered radiation in a radiographic projection of a target object, which incorporates scattered radiation from objects adjacent to the target object, such as a patient table. A piercing point equalization method is disclosed, and a refinement of analytical kernel methods which utilizes hybrid kernels is also disclosed.

Abstract: A method and apparatus are provided for detecting faults in a queue (also known as FIFO) in a digital system. The method augments the FIFO with an external monitoring mechanism which, on demand, checks the FIFO's operation and alerts the system to malfunctioning of the FIFO's control mechanism or corruption of data contained therein. The detection apparatus does not depend on the implementation of the FIFO; the checking is based solely on observing the data entering and exiting the FIFO. Furthermore, the apparatus works in a non-intrusive manner during a normal operation of the FIFO as part of the system. The method and apparatus allow for many variants, all derived from the same general scheme, and which allow different levels of protection against faults.

Abstract: An improved method, apparatus, and control/guiding software for localizing, characterizing, and correcting defects in integrated circuits, particularly open or resistive contact/via defects and metal bridging defects, using FIB technology. An apparatus for identifying an abnormal discontinuity in a contact/via in an integrated circuit comprising a focused ion beam system to scan the ion beam over the contact/via to do remove or deposit via material, a detector to collect a secondary particle signal from the contact/via material that gets removed, a sub-system for storing the secondary particle signal from the contact/via in time as well as x-y scan position, a sub-system for correlating secondary particle signals and identifying discontinuities in the correlated secondary particle signals, a sub-system for optimizing the display of the abnormal discontinuity; and a computer to implement software aspects of the system.

Abstract: A detachable holder for securing small objects inside a brassiere that: can easily be inserted into and removed from a wide variety of brassieres; is washable and follows the configuration of the bra; secures the objects between a pocket in the holder and the bra cup; does not add aesthetically unpleasing bulges; and that can be constructed to be decorative or to further hold decorative additions.

Abstract: A method and system for registering a CAD layout to a Focused Ion Beam image for through-the substrate probing, without using an optical image and without requiring biasing, includes an improved method of trench endpointing during the FIB milling operation with a low beam energy. The method further includes removal of Ga at the trench floor using XeF2, as well as the deposition of an insulating layer onto the trench floor.

Abstract: A method and apparatus for improving system resolution for a defect line scanner while not increasing aliasing effects, or alternatively to maintain system resolution for a defect scanner while decreasing aliasing effects. This is accomplished by decreasing effective pixel size for a CCD array defect line scanner while not decreasing signal-to-noise ratio, with minimal changes to the current machine. The method utilizes a sampling phase shift between successive lines of a multi-line sensor array during scanning.

Abstract: A method for utilizing interference fringe patterns generated when milling a trench through a semiconductor substrate by a method such as FIB milling, to determine and optimize the thickness uniformity of the trench bottom. The interference fringes may be mapped and the mapping used to direct the FIB milling to those regions which are thicker to correct observed non-uniformities in the trench floor thickness by varying the pixel dwell time across the milled area. The interference fringe mapping may be used to develop computerized contour lines to automate the pixel dwell time variations as described above, for correcting non-uniformities in the trench floor thickness. The method may be applied to applications other than trench formation for backside editing, such as monitoring progress in forming a milled object.

Abstract: A scanned optical system for use in optical probing applications provides a large Field of View (FOV) for objective lenses having high Numerical Aperture (NA), such as Solid Immersion Lenses (SIL's). This enables high resolution imaging of semiconductor devices for such applications as laser probing, TIVA/LIVA, OBIRCH, and photon emission timing analysis. A hybrid scanning optics configuration is disclosed to provide high resolution imaging over a small area along with low resolution imaging over a large area.

Abstract: A method of improving stability for CD-SEM measurements of photoresist, in particular 193 nm photoresist, and of reducing shrinkage of 193 nm photoresist during CD-SEM measurements. The photoresist is exposed to a dose of electrons or other stabilizing beam prior to or during CD measurement. One embodiment of the invention includes multiplexing of the SEM electron beam.

Abstract: An illumination delivery system provides a spatially and angularly uniform shaped beam output with sufficient intensity to illuminate a sample surface for defect inspection. Light is transmitted through a shaped fiber optic bundle, a homogenizer, a diffuser, and an optional focusing optics system.

Abstract: An integrated circuit wafer and a manufacturing process for etching low K spin-on dielectrics such as HSQ in a High Density Plasma etch reactor utilizes roof and wall temperature to improve across-the-wafer uniformity, and a mixture of C4F8 and C2F6 etch gases to eliminate mid via etch stop and to maintain selectivity over underlying etch-stop layers.

Abstract: A structure and method for determining barrier layer integrity for multi-level copper metallization structures in integrated circuit manufacturing. Novel testing structures prevent any conducting residues of the copper CMP from diffusing into the dielectric layer. Barrier layer integrity is tested by performing CV or IV measurements between the copper lines and the silicon wafer.