Abstract: A system and method for forming an adjusted estimate of scattered radiation in a radiographic projection of a target object, which incorporates scattered radiation from objects adjacent to the target object, such as a patient table. A piercing point equalization method is disclosed, and a refinement of analytical kernel methods which utilizes hybrid kernels is also disclosed.

Abstract: A product configuration is provided for the packaging of non-mixed beverages and dispensing configuration for mixing of a base beverage and mix beverage into a preferred single-serve mixed drink. The product configuration, called a multi-beverage packaging configuration includes a plurality of base beverage containers, containing a first beverage which may be carbonated, with one or more mix beverage containers, containing one or more mix beverage-for separate consumption or mixing, and one or more volumetric dispensers. The volume of the mix beverage is proportionally divisible by the number of base beverage containers in the product configuration and the division of which is equal to the volume of the volumetric dispenser. The ratio of mix beverage to base beverage in the mixed drink is dependent on the number of base beverage containers in the product configuration, and on the volume of the volumetric dispenser.

Abstract: A method and apparatus for improved defocus detection on wafers. The use of hyperspectral imaging provides increased sensitivity for local defocus defects, and the use of Fourier Space analysis provides increased sensitivity for extended defocus defects. A combination of the two provides improved overall sensitivity to local and extended defocus defects.

Abstract: Enhanced algorithms are provided for finding circuit edit locations which utilize automated conversions from circuit schematic to physical layout design. The enhanced algorithms further include a user interface enabling the user to provide preferences, limitations, and constraints in order to bias the search to be conducted, as well as using the provided design data in order to locate the best positions for particular edit schemes, including net cuts and net joins.

Abstract: A method and apparatus for enhancing image contrast between resist-covered and bare silicon regions of a wafer, applicable to Edge Bead Removal inspection. The wafer is illuminated separately by s-polarized light and p-polarized light impinging at near the Brewster angle of silicon or resist, and an image difference between the reflected s-polarized light and the reflected p-polarized light is derived.

Abstract: A wafer edge inspection system utilizes a novel camera and mirror arrangement which conveys the images of the various near-edge wafer regions in piecewise fashion to a linear sensor array on a single line-scan sensor. This system is low-cost and compact, and may be integrated into various wafer handling or processing machines or systems.

Abstract: An integrated FIB/PEM apparatus and method for performing failure analysis on integrated circuits. In-situ failure analysis is enabled by integrating Photon Emission Microscopy into a Focused Ion Beam system, thereby improving throughput and efficiency of Failure Analysis. An iterative method is described for identifying and localizing fault sites on the circuit.

Abstract: A method and system for registering a CAD layout to a Focused Ion Beam image for through-the substrate probing, without using an optical image and without requiring biasing, includes an improved method of trench endpointing during the FIB milling operation with a low beam energy. The method further includes removal of Ga at the trench floor using XeF2, as well as the deposition of an insulating layer onto the trench floor.

Abstract: A reliable, inexpensive “back side” thinning process and apparatus therefor, capable of globally thinning an integrated circuit die to a target thickness of 10 microns, and maintaining a yield of at least 80%, for chip repair and/or failure analysis of the packaged die. The flip-chip packaged die is exposed at its backside and mounted on a lapping machine with the backside exposed. The thickness of the die is measured at at least five locations on the die. The lapping machine grinds the exposed surface of the die to a thickness somewhat greater than the target thickness. The exposed surface of the die is polished. The thickness of the die is again measured optically with high accuracy. Based on the thickness data collected, appropriate machine operating parameters for further grinding and polishing of the exposed surface are determined. Further grinding and polishing are performed. These steps are repeated until the target thickness is reached.