Abstract: Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.

Abstract: A cleaning system for use with a micro-column array, electron beam lithography system is described. The cleaning system includes an oxidizer source and an oxidizer distribution mechanism that introduces an oxidizer into the imaging chamber of the lithography system. The oxidizer is pumped into the chamber at a flow rate and pressure that maintains a required sub-atmospheric pressure within the imaging chamber. The oxidizer acts to oxidize carbon contamination that may be present in the imaging chamber or on the surfaces of components within the chamber, such as the imaging mask. A volatile oxidized carbon gas is produced by the oxidization of the carbon contaminants. The oxidized carbon gas is pumped out of the imaging chamber to thereby remove the carbon contamination from the chamber.