Abstract: A method of improving adhesion between layers in the formation of a semiconductor device and integrated circuit, and the resultant intermediate semiconductor structure, which include a substrate layer with a low k insulating layer thereover. The low k insulating layer includes a treated surface area of adsorbed gaseous particles. This treated surface area is formed by flowing a gas, preferably, silane, disilane, dichlorosilane, germane or combinations thereof, over a surface of the heated low k insulating layer for adsorption of such gaseous particles onto the heated surface, wherein the insulating layer maintains its original thickness. A capping layer is then deposited directly over the insulating layer wherein the treated surface area of the insulating layer significantly improves adhesion between the insulating layers and the capping layers to prevent delamination therebetween during subsequent processing steps of forming the integrated circuit.

Abstract: Low-pressure drop thermal assemblies, systems and methods of making low-pressure drop thermal assemblies for use in high power flux situations. A manifold body is attached to a distributor to form a subassembly. This subassembly is in communication with a substrate surface, which has a semiconductor device in need of thermal management thereon. An enclosed cavity is formed between the target substrate surface and the subassembly, and a seal of the cavity protects critical components residing on the active surface of the semiconductor device. The distributor includes a distributed liquid impingement microjet inlet array isolated from and parallel with a distributed microjet drain array for impinging cooling fluid and removing spent heated fluid in a direction orthogonal to a target surface for maximizing the heat transfer rate, and thereby providing high cooling flux capabilities while enabling low-pressure drops.

Abstract: A method of forming inter-level contacts or vias between metal layers using a tungsten film deposited into the via using non-collimated sputter deposition. The sputter chamber is configured with a pressure of about 1 mTorr to about 10 mTorr with an inert gas flow of at least at least 25 cm3/min to about 150 cm3/min. Shielding inside the chamber is coated with a material, preferably, aluminum oxide, that promotes adhesion of tungsten to the shielding. An adhesion layer of titanium may be included prior to deposition of the tungsten film. Non-collimated sputter deposition increases the target to substrate distance inside the sputter chamber; reduces the heating effect associated with traditional collimated sputtering; and provides more robust diffusion barriers.