Abstract: A method for conditioning a plasma etch chamber is presented. A plasma etch chamber is provided, which preferably includes a chuck for supporting a topography. A conditioning process may be performed in the etch chamber. The conditioning process preferably includes positioning a cover topography on or above the chuck. A conditioning feed gas containing (hydro)halocarbons may be introduced into the chamber. A conditioning plasma may be generated from the conditioning feed gas for a conditioning time. Immediately after generating the conditioning plasma is complete, the overall thickness of the cover topography is preferably at least as great as immediately before generating the conditioning plasma. By performing a conditioning process in such a manner, the total cost and complexity of the conditioning process may be reduced.