Patents Represented by Attorney Dicke, Bilig & Czaja, PLLC

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  • Memory using tunneling field effect transistors
    Patent number: 7880160
    Abstract: A memory includes a first tunneling field effect transistor including a first drain and a first source, the first drain coupled to a first resistive memory element. The memory includes a second tunneling field effect transistor including a second drain and sharing the first source, the second drain coupled to a second resistive memory element. The memory includes a first region coupled to the first source for providing a source node.
    Type: Grant
    Filed: May 22, 2006
    Date of Patent: February 1, 2011
    Assignee: Qimonda AG
    Inventor: Thomas Nirschl