Abstract: A transistor component and method of forming a transistor component. One embodiment provides a semiconductor arrangement including a semiconductor body having a at least one first trench, a first field electrode arranged in the lower trench section of the at least one first trench and being insulated from the semiconductor body by a field electrode dielectric. A dielectric layer is formed on the first field electrode in the at least one first trench, including depositing a dielectric material on a first side of the semiconductor body and on the field plate at a higher deposition rate than on sidewalls of the at least one first trench.