Abstract: A logic gate that includes a first differential amplifier and a feedback circuit. The first differential amplifier has a number of first (e.g., non-inverting) inputs and a second (e.g., inverting) input, receives and senses input signals applied to the non-inverting inputs, and provides a differential output that is a particular logic function (e.g., an ‘OR’) of the input signals. The non-inverting inputs may correspond to the gates of a number of transistors coupled in parallel to form an OR function. The feedback circuit detects the (e.g., non-inverting node of the) differential output and provides a control signal for the inverting input of the first differential amplifier. The logic gate typically further includes a second differential amplifier that senses and further drives the differential output.

Abstract: An output buffer having one or more of the following advantages: (1) faster slew rate, (2) reduced switching noise during signal transitions, and (3) improved switching time. The output buffer includes a pair of output transistors. At least one of the output transistors is designed with dynamically adjustable beta that allows for robust control of the output buffer operating characteristics. The beta can be adjusted by changing the size of the output transistor. Transistor size can be changed, in turn, by enabling and disabling additional output transistor(s).

Abstract: A sample rate converter that includes a number of selector elements coupled to a summing circuit. Each selector element receives a respective set of one or more processed data samples and provides one of the processed data samples. Each processed data sample is generated by delaying an input sample by zero or more clock cycles and scaling the sample by a particular scaling factor (e.g. 2N, where N is 0, 1, 2, and so on). The summing circuit receives and combines the processed data samples from the selector elements to generate an output sample. A delay and scaler circuit can receive the input sample and provide one set of processed data samples for each selector element. The delay and scaler circuit can include one or more delay elements coupled in series and to a scaling circuitry that scales selected ones of the input and delayed samples. The scaling can be implemented by simply bit-shifting the samples. The elements of the sample rate converter can be configured to implement a K-tap, P-phase interpolator.

Abstract: A network of servers coupled to the Internet provides a virtual desktop in a virtual computing environment. A user is able to access the virtual desktop from a variety of systems through various communications links. A site server initially receives a URL access from the user at a local system. After a successful login, a personal web page of the user is retrieved from a file server and returned to the local system. Through the personal web page, the user is able to send commands that are received and processed by one or more backend servers. The web page represents the virtual desktop of the user and includes links for applications available to the user, files and folders accessible by the user, and other personal information of the user. The network provides facilities to manipulate and manage files, and facilities to access and process data from web sites on the Internet.

Abstract: A redundant circuit that includes a combination of fuses and anti-fuses, and which may be used during various phases of the manufacturing process (e.g., during wafer test or final test) to replace a defective circuit. The redundant circuit includes (1) a replacement circuit (e.g., a redundant memory cell) that is configurable to replace a defective circuit, and (2) supporting circuitry for the replacement circuit. The support circuit is configurable to provide a control signal (e.g., to activate a word line) for the replacement circuit and further includes at least one fuse and at least one anti-fuse. The fuses or anti-fuses may be programmed to provide a programmed value (e.g., a programmed address) for the replacement circuit. The redundant circuit can be efficiently fabricated within a memory device, and may also be used for other circuits and applications.

Abstract: A memory array architecture that supports block write operation and has many advantages over conventional memory array architectures. A memory array is partitioned into a number of (N) segments. Each segment includes at least one bit line. Each segment is associated with a local input/output (I/O) line that couples to zero or more bit lines within that segment. The bit lines are coupled to the local I/O line by controlling one or more column select lines associated with that segment. Each segment is also associated with a write driver that couples to the local I/O line. Each local I/O line has a length that is a portion of a length of the memory array. A block write operation is performed by concurrently driving one or more write drivers (up to N write drivers). Each write driver drives the bit lines coupled to the local I/O line associated with that write driver.

Abstract: Techniques and circuits for testing high-speed circuits using slow-speed input signals. Various designs for a “stimulus” generator are provided, which is capable of generating a high-speed stimulus based on, or in response to, one or more input signals. In one design, the generator includes two edge detectors coupled to a latch. Each edge detector receives a respective set of input signals and provides an intermediate signal. The latch receives the two intermediate signals from the two edge detectors and generates the output signal, which has a particular waveform pattern generated based on the active (e.g., leading) transitions in the two sets of input signals provided to the two edge detectors. In another design, the generator includes a ring oscillator that is enabled by one input signal, and further initiated by a pulse on another input signal provided to an input of a latch used to implement the oscillator.

Abstract: Techniques for enhancing edges in video signals while reducing the amounts of undershoots and overshoots. A video signal is processed to generate a first signal indicative of detected edges in the video signal. The first signal can be generated by lowpass filtering the video signal to generate a lowpass signal and subtracting the lowpass signal from a luminance signal that has been extracted from the video signal. The first signal is then processed with a “non-linear” transfer function to generate a second signal having enhanced edges. The second signal is used as the correction or enhancement signal, and is added to the lowpass signal to provide an output signal having enhanced edges with reduced or minimal amounts of undershoots and overshoots.

Abstract: An output driver that includes a waveform detector and a driver unit. The waveform detector receives at least one data signal, detects for particular patterns of interest (e.g., a sequence of zeros or ones) within the received data signal, and provides one or more control signals indicative of the detected patterns of interest. The driver unit receives the data signal and provides at least one output signal in response thereto. The driver unit further receives the control signal(s) and adjusts one or more characteristics of the output signal based on the received control signal(s). Various characteristics of the output signal (e.g., slew rate, delay, drive strength, and others) can be adjusted to achieved the desired result (e.g., reduced amount of skew, ISI). The driver unit can be designed to include a pre-driver that receives the data signal and provides at least one pre-drive signal and a driver that receives the pre-drive signal and provides the output signal.

Abstract: A refresh control circuit for a DRAM that includes a timing circuit, a control logic, an address generator, and a multiplexer. The timing circuit provides a refresh enable signal that can be based on, for example, one or more received operational signals (e.g., CLK or CKE) or a device idle signal. The control logic receives the refresh enable signal and a command control signal and provides a refresh control signal. The address generator receives the refresh control signal and provides a refresh address. The multiplexer receives the refresh address and an external address and provides one of the received addresses as an output address. The refresh control circuit initiates refresh of selected memory cells within the DRAM in time periods between memory accesses of the DRAM. The refresh control circuit can support a memory refresh concurrent with a memory access. Other embodiments of the refresh control circuit are also provided.

Abstract: Memory sensing circuits having low latency or delay. Low latency can be achieved, in part, by utilizing multiple amplifiers in the sense amplifier circuit. Each amplifier detects and amplifies a differential voltage on a pair of lines used for sensing a logic state of a memory cell. The use of multiple amplifiers improves the response times of the lines, which can allow for an earlier detection of the voltages on the lines, a shorter memory access cycle, and an improved data transfer rate. Low latency can also be achieved by using a set of isolation switches and a latch in the sense amplifier circuit. The latch “captures” the voltages on the lines after the voltages have exceeded a set of thresholds. The latch provides the captured value to subsequent circuitry at the same time that the lines are “deactivated.

Abstract: A datapath structure (for use in conjunction with at least one memory array) that includes N local data lines, N global data lines, M global I/O lines, and a datapath. Each memory array is partitioned into a number of segments, and each segment is associated with one or more bit lines. Each segment is further associated with at least one local data line. Each local data line couples to the bit lines associated with that particular local data line. The N global data lines operatively couple to the N local data lines. The datapath interconnects the N global data lines to the M global I/O lines in accordance with a set of control signals. The datapath includes M local I/O lines, M multiplexer circuits, and M interface circuits. The M interface circuits interconnect the M global I/O lines and the M local I/O lines. Each of the M multiplexer circuits interconnects the M local I/O lines to N/M of the N global data lines. In a specific implementation, M is eight and N is sixty-four.

Abstract: A memory device that includes a row decoder, a set of word line, and one or more word line pull-down drivers. The row decoder includes decoding circuitry and a set of word line drivers. The decoding circuitry is configured to receive address information and generate a set of word line control signals. The word line drivers couple to the decoding circuitry and are responsive to the word line control signals. Each word line driver is configured to provide pull-up drive capability, and can further be configured to provide pull-down drive capability. Each word line couples to at least one word line driver. The word line pull-down driver(s) couples to the word lines, with each word line pull-down driver being configured to provide pull-down drive capability. One or more word line pull-down drivers can be distributed (i.e., uniformly) along the length of each word line. The word lines can also be implemented using a hierarchical word line architecture that includes a set of main word lines (i.e.

Abstract: A sense amplifier for detecting a logic state of a memory cell includes a voltage amplifier, a current mirror, and a feedback circuit. The voltage amplifier couples to the memory cell and the current mirror. The feedback circuit couples to the current mirror and an input of the sense amplifier. The feedback circuit can be implemented with a transistor, a switch, a transmission gate, or the like. The feedback circuit is selectively enabled to quickly charge or discharge the voltage at the input of the sense amplifier to a trip voltage of the sense amplifier. Whether charging or discharging is performed is dependent on the voltage then existing at the input node. The amount of charging and discharging current can also be based on other circuit considerations, such as the required charge time, and so on. When the voltage at the input reaches a predetermined voltage range, the feedback circuit is disabled.

Abstract: A memory array architecture (which can be used to implement a memory device and other circuits having an embedded memory array) supports multi-data rate operation. The memory device includes at least one memory array and at least one sense amplifier arrays. Each memory array is partitioned into a number of substantially similar segments. Each segment is associated with at least one local I/O lines. Each local I/O line has a length that is a portion of a length of the memory array. By partitioning the memory array, the supporting circuitry (e.g., the sense amplifier array), and the local I/O lines into segments, access of multiple data bits can be achieved without having to incur a significant "die penalty.