Abstract: System and method for detecting transistor failure in large-scale integrated circuits by measuring IDDQ. A preferred embodiment comprises a switch structure for an integrated circuit made up of a plurality of main switches (such as main switch 410) selectively coupling a power sub-domain to a power source pin, a plurality of pi-switches (such as pi-switch 415) selectively coupling pairs of power sub-domains, and a plurality of IDDQ switches (such as IDDQ switch 425) selectively coupling the power sub-domains to a VIDDQ pin. The pi-switches can decouple the power sub-domains while the IDDQ switches can enable the measurement of the quiescent current in the power sub-domains. The use of pi-switches and IDDQ switches can permit the measurement of the quiescent current in the power sub-domains without requiring the use of isolation buffers and needed to powering on and off the integrated circuit between current measurements in the different power sub-domains.
Type:
Grant
Filed:
December 10, 2004
Date of Patent:
October 16, 2007
Assignee:
Texas Instruments Incorporated
Inventors:
Wei Chen, Hugh T. Mair, Uming Ko, David B. Scott
Abstract: An IC package includes a package body of non-conductive material. A conductive heat-sink pad includes an interior pad portion located within an interior of the package body. An exterior pad portion is located external to the package body. The exterior pad portion includes at least two pad pieces that are spaced apart to define at least one channel that separates the at least two pad pieces, the at least two pad pieces being electrically connected with each other. The at least two pad pieces may be flush with an underside surface of the package body or one or more of the pad pieces may extend outwardly from the package body.