Patents Represented by Attorney, Agent or Law Firm Donald R. Studebaker LLP
  • Etching method, semiconductor and fabricating method for the same
    Patent number: 6632746
    Abstract: An organic/inorganic hybrid film represented by SiCxHyOz (x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.
    Type: Grant
    Filed: April 19, 2001
    Date of Patent: October 14, 2003
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kenshi Kanegae, Shinichi Imai, Hideo Nakagawa