Patents Represented by Attorney Donald S. Dohen

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  • Method of making P-type hydrogenated amorphous silicon
    Patent number: 4551352
    Abstract: A layer of P-type hydrogenated amorphous silicon having a wide band gap and relatively low conductivity is formed by subjecting a substance to a gaseous mixture of a silicon hydride and an acceptor material in a glow discharge while heating the substrate to a temperature of no greater than 120.degree. C. The deposited acceptor-doped hydrogenated amorphous silicon layer is then heated at a temperature of between 130.degree. C. and 300.degree. C. to increase the conductivity of the layer.
    Type: Grant
    Filed: January 17, 1985
    Date of Patent: November 5, 1985
    Assignee: RCA Corporation
    Inventor: Jacques I. Pankove