Abstract: The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich oxidation system for performing the process are provided in which innovative safety features are included to avoid the dangers to personnel and equipment that are inherent in working with hydrogen-rich atmospheres.
Type:
Grant
Filed:
June 6, 2003
Date of Patent:
September 19, 2006
Assignee:
Aviza Technology, Inc.
Inventors:
Robert B. Herring, Cole Porter, Travis Dodwell, Ed Nazareno, Chris Ratliff, Anindita Chatterji