Abstract: A method of fabricating single and dual damascene copper interconnects is achieved. A semiconductor substrate layer is provided. Conductive traces are provided in an isolating dielectric layer. An intermetal dielectric layer is deposited overlying the conductive traces and the isolating dielectric layer. The intermetal dielectric layer is patterned to form trenches to expose the top surfaces of the underlying conductive traces. A barrier layer is deposited overlying the intermetal dielectric layer, the exposed conductive traces, and within the trenches. A platinum ionic seed solution is coated inside the trenches and overlying the barrier layer. A platinum seed layer is deposited from the ionic seed solution by exposing the platinum ionic seed solution to ultraviolet light.