Patents Represented by Attorney Duane Morrris, LLP

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  • Cobalt/nickel bi-layer silicide process for very narrow line polysilicon gate technology
    Patent number: 7247915
    Abstract: A silicide method for integrated circuit and semiconductor device fabrication wherein a layer of nickel is formed over at least one silicon region of a substrate and a layer of cobalt is formed over the nickel layer. The cobalt/nickel bi-layer is then annealed to transform the bi-layer to a bi-silicide film having a cobalt-rich silicide portion and a nickel-rich silicide portion.
    Type: Grant
    Filed: March 15, 2006
    Date of Patent: July 24, 2007
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chih-Wei Chang, Mei-Yun Wang, Shau-Lin Shue, Mong-Song Liang