Patents Represented by Attorney E. E. Packer

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  • Method of forming oxide layers by bias ECR plasma deposition
    Patent number: 5124014
    Abstract: A method of forming silicon dioxide layers by bias ECR is described. The layers are formed by reacting oxygen with TEOS or TMCTS. High-quality, void-free layerc can be formed over conductor patterns having high-aspect-ratio intermetallic spacings.
    Type: Grant
    Filed: April 11, 1991
    Date of Patent: June 23, 1992
    Assignee: AT&T Bell Laboratories
    Inventors: Pang-Dow Foo, Ajit S. Manocha, John F. Miner, Chien-Shing Pai