Abstract: Disclosed is an electrostatographic imaging member comprised of a supporting substrate, a blocking layer of hydrogenated amorphous silicon with dopants, a hydrogenated amorphous silicon photoconducting layer with dopants, and in contact therewith a top overcoating layer of nonstoichiometric silicon nitride with from between 67 to 95 atomic percent of silicon, and from between 33 to 5 atomic percent of nitrogen.