Abstract: A TFEL edge emitter structure has a bottom substrate layer, a lower common electrode layer applied over the bottom substrate layer an upper control electrode layer, and a middle EL light-energy generating stack disposed between the lower common electrode and the upper control electrode layers. The middle EL stack includes a lower dielectric layer, an upper dielectric layer, and a middle light-energy generating layer. The lower dielectric layer overlies the lower common electrode layer and bottom substrate layer. The middle light-energy generating layer is deposited over the lower dielectric layer. The upper dielectric layer is deposited over the middle light-energy generating layer. A light emitting face on a front edge of the EL stack is disposed at an angle relative to a street on the front edge portion of the substrate layer that is greater than ninety degrees.