Abstract: A circuit for selectively enabling one circuit from among a plurality of circuit alternatives of an integrated circuit, comprising selection circuit means for selecting one among said circuit alternatives. The selection means are controlled by bistable circuit means having a preferred state. Disactivatable forcing means associated to said bistable means are provided for forcing said bistable means in a state opposite than said preferred state, so that when said forcing means are disactivated the bistable circuit means automatically switch to said preferred state.

Abstract: An electronic device having first and second external pins; first and second pads connected to the first external pin by respective bonding wires; and third and fourth pads connected to the second external pin respective bonding wires, and to a first common line by respective resistors. By means of a circuit configuration of this type, the intactness of the bonding wires can easily be checked by carrying out a simple resistance measurement between the first and the second external pin.

Abstract: An interface for translating data of different voltages includes an input terminal structured to accept an input from a circuit supplied by a power supply having a first voltage level, as well as an output terminal structured to provide an output from the interface a first circuit portion powered by a power supply having the first voltage level, a second circuit portion is powered by a power supply having a second voltage level, and a power supply detection circuit structured to accept a detection signal and to maintain a correct output at the output terminal even after the power supply having the first voltage level no longer supplies the first voltage level to the interface.

Abstract: A monitoring circuit for a data transmission network having a plurality of transmissive and receptive network nodes and a double-line bus connecting the network nodes and serving for redundant double transmission of digital communications, with a first line (A) and a second line (B) via which communication pulses transferred in the form of time-spaced pulse sequences are transferred in synchronous manner in terms of time slot, a potential change detector is provided by means of which the two lines can each be monitored for the presence of potential change activities and by means of which a condition can be detected in which, during a pulse sequence, potential change activities occur only on the first line, but not on the second line; and a first time measuring circuit is provided by means of which a time measurement of the duration of such a condition can be carried out, and when a predetermined duration of such a condition is exceeded, an error signal is generated.

Abstract: A CMOS voltage translator having a differential cell circuit portion connected between first and second supply voltage references, and including first and second transistor pairs connected together in series between the supply voltage references. A first divider of the first supply voltage reference for producing a first reduced supply voltage reference on a first internal circuit node, and a second divider of the first supply voltage reference for producing a second reduced supply voltage reference on a second internal circuit node is included, as well as a multiplexer circuit portion connected between the first and second reduced supply voltage references to supply first and second reference voltages to the differential cell circuit portion, respectively on third and fourth internal circuit nodes.

Abstract: A method of designing an addition circuit, and an addition circuit designed according to the method are described. The design technique is optimised to facilitate design of an addition circuit of minimum depth. The design technique takes into account the number of logical stages of the addition circuit and the manner in which those stages are connected by spanning paths to create fan-out nodes. The number of fan-out nodes per level can be optimized. For bit lengths n, the number (m+2) of logical stages is n=2m+1 and for bit lengths n not of a binary order, the number (m+2) of logical stages is nb0=2m+1, where nb0 is the next largest binary order after n.

Abstract: A MOS-type power device having a drain terminal, a source terminal, and a gate terminal; and a protection circuit having a first conduction terminal connected to the gate terminal, via a diffused resistor, and a second conduction terminal connected to the source terminal. The protection circuit has a resistance variable between a first value and a second value according to the operating condition of the power device. In a first embodiment of the protection circuit, an ON-OFF switch made by means of a horizontal MOS transistor has a control terminal connected to the drain terminal of the power device. In a second embodiment of the protection circuit, the ON-OFF switch is replaced with a gradual-intervention switch made by means of a P-channel JFET transistor having a control terminal connected to the gate terminal of the power device.

Abstract: A process that includes the steps of forming, in a wafer of monocrystalline silicon, first trenches extending between portions of the wafer; etching the substrate to remove the silicon around the first trenches and forming cavities in the substrate; covering the walls of the cavities with an epitaxial growth inhibiting layer; growing a monocrystalline epitaxial layer on top of the substrate and the cavities so as to obtain a monocrystalline wafer embedding buried cavities completely surrounded by silicon; forming second trenches extending in the epitaxial layer as far as the cavities; removing the epitaxial growth inhibiting layer; oxidizing the cavities, forming at least one continuous region of buried oxide; depositing a polysilicon layer on the entire surface of the wafer and inside the second trenches; removing the polysilicon layer on the surface and leaving filling regions inside the second trenches; and oxidizing, on the top, portions of said filling regions so as to form field oxide regions.

Abstract: A power-on reset circuit connected to a supply line feeding a supply voltage, the circuit including an output terminal supplying a power-on reset signal; a divider connected between the supply line (36) and ground and having an intermediate node supplying a division voltage correlated to the supply voltage; an inverter having an input connected to the intermediate node and an output connected to the output terminal and supplying a reset logic signal; and a deactivation branch coupled to the supply line and the intermediate node. The deactivation branch preventing switching of the power-on reset signal on the output terminal when the supply voltage is higher than a deactivation voltage.

Abstract: A process for the manufacturing of electronic devices, including memory cells, involving forming, on a substrate of semiconductor material, multilayer stacks including a floating gate region, an intermediate dielectric region, and a control gate region; forming a protective layer extending on top of the substrate and between the multilayer stacks and having a height at least equal to the multilayer stacks. The step of forming multilayer stacks includes the step of defining the control gate region on all sides so that each control gate region is completely separate from adjacent control gate regions. The protective layer isolates the multilayer stacks from each other at the sides. Word lines of metal extend above the protective layer and are in electrical contact with the gate regions.

Abstract: A method for providing an SOI wafer that includes, on a wafer of monocrystalline semiconductor material, forming a hard mask of an oxidation-resistant material, defining first protective regions covering first portions of the wafer; excavating the second portions of the wafer, forming initial trenches extending between the first portions of the wafer; thermally oxidating the wafer, forming a sacrificial oxide layer extending at the lateral and base walls of the initial trenches, below the first protective regions; and wet etching the wafer, to completely remove the sacrificial oxide layer. Thereby, intermediate trenches are formed, the lateral walls of which are recessed with respect to the first protective regions. Subsequently, a second oxide layer is formed inside the intermediate trenches; a second silicon nitride layer is deposited; final trenches are produced; a buried oxide region is formed, and finally an epitaxial layer is grown.

Abstract: A process for manufacturing an electronic device having an HV MOS transistor with a low multiplication coefficient and a high threshold in a non-implanted area of the substrate, this area having the same conductivity type and the same doping level as the substrate. The transistor is obtained by forming, over the non-implanted substrate area, a first gate region of semiconductor material having the same doping type as the non-implanted substrate area; and forming, inside the non-implanted substrate area, first source and drain regions of a second conductivity type, arranged at the sides of the first gate region. At the same time, a dual-gate HV MOS transistor is formed, the source and drain regions of which are housed in a tub formed in the substrate and having the first conductivity type, but at a higher concentration than the non-implanted substrate area. It is moreover possible to form a nonvolatile memory cell simultaneously in a second tub of the substrate of semiconductor material.

Abstract: A method enhances selectivity between a film of a light-sensitive material and a layer to be subjected to etching in the course of fabrication processes of an electronic semiconductor device starting from a semiconductor material wafer. The method includes radiating the wafer with an ion beam subsequently to depositing the layer to be etched and defining a circuit pattern on the film of light-sensitive material. An alternative method exposes the wafer to a non-reactive gas medium under plasma rather than radiating the wafer with an ion beam.

Abstract: Process for forming salicide on active areas of MOS transistors, each MOS transistor comprising a gate and respective source and drain regions, the source and drain regions each comprising a first lightly doped sub-region adjacent the gate and a second highly doped sub-region spaced apart from the gate. The salicide is formed selectively at least over the second highly doped sub-regions of the source and drain regions of the MOS transistors, and not over the first lightly doped sub-region.

Abstract: A method of re-establishing the stability of a sigma-delta modulator having a plurality of integrator stages in cascade and a quantizer, achieving very short resetting times, a bit sequence corresponding to an instability state of the modulator is defined, the bit-stream output by the modulator is monitored to check whether it includes the instability sequence and, if the instability sequence is detected, the last integrator stage is reset and one or more preceding integrator stages are reset, progressively, until the instability sequence is no longer detected.

Abstract: A fabrication process and an integrated MOS device having multi-crystal silicon resisters are described. The process includes depositing a multi-crystal silicon layer on top of a single-crystal silicon body; forming silicon oxide regions on top of the multi-crystal silicon layer in zones where resistors are to be produced; depositing a metal silicide layer on top of and in contact with the multi-crystal silicon layer so as to form a double conductive layer; and shaping the conductive layer to form gate regions, of MOS transistors. During etching of the double conductive layer, the metal silicide layer on top of the silicon oxide regions is removed and the silicon oxide regions form masking regions for the multi-crystal silicon underneath, so as to form resistive regions having a greater resistivity than the gate regions.

Abstract: A method of testing an integrated circuit that includes supplying the integrated circuit in static conditions; biasing the p-type body regions with a potential more negative than the negative pole of the supply and the n-type body regions with a potential more positive than the positive pole of the supply; setting a current threshold value; measuring the current absorbed; comparing the current measured with the threshold current; and accepting or rejecting the integrated circuit if the comparison shows that the current measured is less than or is greater than the threshold value, respectively.

Abstract: A class AB single-stage operational amplifier having input decoupler stages for voltage signals, a voltage repeater stage, biasing transistors and bias current generators for the input decoupler stages, and capacitors placed between the input decoupler stages and the voltage repeater stage so as to increase the phase margin.

Abstract: The detection of the presence of a load associated with a power MOS transistor integrated with its control circuit, using a delay determined taking into account the detection with respect to the occurrence of a turn-off control order of the power transistor, and where the filtering time is controlled with the power transistor switching time.

Abstract: A temperature control system and method for integrated circuits, particularly those having a plurality of channels or power devices. The temperature control system for an integrated circuit includes at least a heat generating device; a sensor element providing a signal correlated to the working conditions of said the heat generating device such as a signal proportional to the dissipated power of the heat generating device; an elaboration circuit of the signal correlated to the working conditions of the heat generating device; and a turning off circuit of said at least a heat generating device responsively to a signal of said elaboration circuit.