Abstract: Ultra-miniature electrical contacts are provided with the strength and resilience necessary to give stable low resistance connection, to minute areas of a device, such as a thousand or so closely spaced surface pads of an integrated circuit. Each contact is initially formed on a substrate as a thin, narrow elongated flat body comprised of selectively deposited layers of metal. Depending on the final configuration desired for the contact, the metal of one metal layer has a coefficient of thermal expansion such as chromium (Cr), and the metal of another layer has a coefficient of thermal expansion such as copper (Cu). Each contact is permanently formed (by differential expansion of the metal layers when heated) into a three-dimensional structure and is then made “robust” by a covering of a specialized stiffening metal plating which adds substantial strength to the contact.

Abstract: A method is provided for determining dopant impurity concentration ND in certain semiconductor devices, such as high voltage lateral double diffused metal oxide semiconductor (HV LDMOS) transistors. Such a device is scanned along its length by a beam of radiant energy (e.g., a laser beam focused through a microscope onto the device) while the device is reverse biased by a voltage V. A resulting beam induced current signal measures a depletion width W, for a given bias voltage V, the widths W increasing with increasing bias voltages V. From a series of respective voltages V and widths W a profile of corresponding dopant concentrations ND is determined using a suitable mathematical algorithm.

Abstract: Ultra-miniature electrical contacts are provided with the strength and resilience necessary to give stable low resistance connection, to minute areas of a device, such as a thousand or so closely spaced surface pads of an integrated circuit. Each contact is initially formed on a substrate as a thin, narrow elongated flat body comprised of selectively deposited layers of metal. Depending on the final configuration desired for the contact, the metal of one metal layer has a coefficient of thermal expansion such as chromium (Cr), and the metal of another layer has a coefficient of thermal expansion such as copper (Cu). Each contact is permanently formed (by differential expansion of the metal layers when heated) into a three-dimensional structure and is then made “robust” by a covering of a specialized stiffening metal plating which adds substantial strength to the contact.

Abstract: Apparatus and method are provided for enabling unimpeded, clock-to-clock communication between different classes of equipment including converting without queuing of data parallel bytes of digital data having a given number of binary bits to parallel bytes having a different (greater or smaller) number of bits.

Abstract: There is provided a method of adding a new private branch exchange interface (PBX port) to a data communication network having a number of existing PBX ports, each coupled to respective ones of data transport nodes for sending and receiving via high speed data links (e.g., T-1 lines) customer data to each of the other nodes. A network management system computer having a database is coupled to the network.

Abstract: Suppressed synchronizing signals of a scrambled standard TV picture are recovered and the picture unscrambled by a method including the steps of: separating a video portion having suppressed sync signals from an audio portion of a TV picture at an intermediate frequency level, amplifying the video portion through a gain controlled amplifier, selectively compensating for the suppressed levels of sync signals, passing the video portion with recovered sync signals of the TV picture through a demodulator, and providing a feedback signal from the demodulator to the gain controlled amplifier to automatically control its gain and thereby minimize artifacts in the TV picture after sync recovery. This new method is easily carried out by apparatus using only a few standard circuit components which can be manufactured as an application specific integrated circuit (ASIC).

Abstract: Cost effective video clipping circuitry and method achieve lower distortion color television broadcasting. Excess "white" level voltage peaks in otherwise standard (e.g., that of the National Television Standards Committee) color line video signals are clipped by a unique arrangement to prevent over-modulation of an RF broadcast carrier. The circuitry includes amplifier circuitry for substantially amplifying a line video signal above standard levels, diode clipping circuitry for clipping excess white levels from the signal after it has been amplified thereby reducing distortion otherwise caused by an inherent non-linear initial conduction characteristic of the diode clipping circuitry, and attenuator circuitry for attenuating to standard levels the signal after clipping so as to obtain reduced luminance and chrominance distortion.