Abstract: Impurities such as PH.sub.3, AsH.sub.3, and B.sub.2 H.sub.6 may be removed from SiH.sub.4 by means of selective photolysis with ultraviolet radiation of the appropriate wavelength. An ArF laser operating at 193 nm provides an efficient and effective radiation source for the photolysis.
Type:
Grant
Filed:
December 28, 1977
Date of Patent:
March 27, 1979
Assignee:
The United States of America as represented by the United States Department of Energy