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Patents Represented by Attorney Edwards Angeli Palmer & Dodge, LLP

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Method of manufacturing semiconductor device including etching a conductive layer by using a gas including SiCland NF

Patent number: 7138339

Abstract: A method of manufacturing a semiconductor device comprising forming an insulating layer above a semiconductor layer, forming a conductive layer including at least tantalum and tantalum nitride, and etching the conductive layer with using a gas including SiCl4 and NF3.

Type: Grant

Filed: October 3, 2003

Date of Patent: November 21, 2006

Assignee: Seiko Epson Corporation

Inventor: Hiroyuki Shimada