Abstract: A process in the manufacture of integrated circuits in which a barrier layer of Cr or Ti is deposited in a partial atmosphere of N.sub.2 in an Ar sputtering gas on a layer of Si so that the N.sub.2 is incorporated in the Cr or Ti, after which conductor material such as gold, silver, low temperature eutectic or other high temperature solders, are deposited on the barrier layer. This barrier layer reduces migration of Si and Cr through and over the conductor material so that a wettable (bondable) surface is provided which results in greater bond strength and greater reliability when the die is attached to a bonding pad by the conventional heat treat method.