Patents Represented by Attorney, Agent or Law Firm Eitan, Pearl, Latze & Cohen Zedek, LLP
  • NROM cell with self-aligned programming and erasure areas
    Patent number: 6664588
    Abstract: A memory cell has two diffusion areas in a substrate with a channel therebetween. The memory cell also includes a trapping dielectric layer at least over the channel, a gate at least above the trapping dielectric layer, and an implant in the substrate adapted to provide maximal band-to-band tunneling during erasure of charge stored in the trapping dielectric layer.
    Type: Grant
    Filed: June 14, 2001
    Date of Patent: December 16, 2003
    Assignee: Saifun Semiconductors Ltd.
    Inventor: Boaz Eitan