Abstract: In an integrated circuit, a pair of IGFET devices can be formed with reduced dimensions without requiring the use of higher resolution optical masks. A gate electrode is formed with a layer of silicon nitride and a photoresist layer formed thereon. The dimensions of the photoresist layer are reduced by a trim etch and the dimension of the nitride layer reduced by a nitride etch. After removing the photoresist layer, a silicon oxide layer is grown over the exposed gate electrode and substrate. The nitride layer is removed leaving a pattern in the silicon oxide layer. An anisotropic etch guided by the pattern in the silicon oxide layer divides the gate electrode into two portions with an aperture therebetween. By proper doping, a IGFET structure can be formed that has two IGFET devices having a shared source/drain region and occupying the same area on the surface of the substrate as a single IGFET device previously occupied.